Polymer Doped High Brightness Phosphorescent Organic Light-Emitting Diodes

Tang Xiao-Qing,Yu Jun-Sheng,Li Lu,Wang Jun,Jiang Ya-Dong
DOI: https://doi.org/10.3866/pku.whxb20080617
2008-01-01
Abstract:Polymer doped organic light-emitting diodes (OLEDs) with the structure of indium-tin oxide (ITO)/poly(N-vinylcarbazole) (PVK)∶(pbi)2Ir(acac)/2,9-dimethyl-4,7-diphenyl-1,10-phenan throline (BCP)/Mg∶Ag were fabricated. The light-emitting layer was processed by doping noble metal iridium complex (pbi)2Ir(acac) into a PVK matrix with the concentrations of 4% and 5%(w), using spin coating method. Through characterizing the UV-Vis absorption spectrum, photoluminescence (PL) spectrum of the (pbi)2Ir(acac) and the electroluminescence (EL) properties of the devices, the main energy transfer mechanisms from phosphorescent material (pbi)2Ir(acac) to PVK were discussed. The device performance was investigated at different current densities and doping concentrations. The results showed that the devices with above two different doping concentrations have the maximum brightness of 11210 and 9174 cd·m-2 and maximum luminance efficiency of 1.53 and 1.31 lm·W-1, respectively. The EL spectrum and the Commissions Internationale de 1′Eclairage (CIE) coordinates were independent on the variation of bias voltage and the doping concentration, indicating a stable color purity.
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