Abstract:We report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

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A Low Dark Current InGaAs/GaAs Very-Long-wavelength Quantum Well Infrared Photodetector

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Study of the Dark Current in Very Long Wavelength Quantum Well Infrared Photodetectors

Dark Currents of GaAs/AlGaAs Quantum-Well Infrared Photodetectors

Ultimate performance of Quantum Well Infrared Photodetectors in the tunneling regime

Vertical field enhanced nanostructure for quantum well infrared photodetector through Germanium subwavelength arrays

Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors

The Theory and Experiment of Very-Long-wavelength 256×1 GaAs/Al X Ga1−x As Quantum Well Infrared Detector Linear Arrays

A Sensitive Double Quantum Well Infrared Phototransistor

Detection Wavelength of Strained Inxga1-Xas/Gaas Very-Long-Wavelength Quantum Well Infrared Photodetectors

Photocurrents of 14 Μm Quantum-Well Infrared Photodetectors

Two-color Infrared Detection Using Intersubband Transitions in Multiple Step Quantum Wells with Superlattice Barriers

Short Wavelength (1–4 Μm) Infrared Detectors Using Intersubband Transitions in GaAs-based Quantum Wells

Asymmetric Dark Current in Double Barrier Quantum Well Infrared Photodetectors

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Enhanced response over wavelength range of 7-12 µm for quantum wells in asymmetric micro-pillars

High Performance InAs/GaSb Superlattice Long Wavelength Photodetectors Based on Barrier Enhanced Structures

Quantum scattering engineering for the reduction of dark current in very long wavelength quantum well infrared photodetector

Detectivity Simulation of Long-wavelength Quantum Well Infrared Photodetectors

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection