Abstract:Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, the ionizing-irradiation-induced damage in transistors with silica-silicon (SiO2 -Si) structures at room temperature has been modeled by a uniform generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers in the bulk silica region through the capture of irradiation-induced holes, and an irreversible conversion from <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> to Pb centers at the SiO2 /Si interface through reactions with hydrogen molecules (H2 ). However, the traditional model fails to explain experimentally-observed dose dependence of the defect concentrations, especially at low dose rate. Here, it is proposed that the generation of <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> centers is decelerated because the holes migrate dispersively in disordered silica and the diffusion coefficient decays as the irradiation goes on. It is also proposed that the conversion between <math><mrow><msub><msup><mi>E</mi><mo>'</mo></msup><mi>γ</mi></msub></mrow></math> and Pb centers is reversible because the huge activation energy of the reverse reaction can be reduced by a "phonon-kick" effect of the vibrational energy of H2 and Pb centers transferred from nearby nonradiative recombination centers. Experimental studies are carried out to demonstrate that the derived analytic model based on these two new concepts can consistently explain the fundamental but puzzling dose dependence of the defect concentrations for an extremely wide dose rate range.

Modeling Analysis of Radiation Induced Conductivity in Electrical Insulator

Nonlinear Fdtd Solution To The High-Field Conduction Model For Some Solid Dielectrics

Numerical and experimental study of radiation induced conductivity change of carbon nanotube filled polymers.

A Phenomenological MOSFET Model Including Total Dose Radiation Effects at a High Total Dose

Modification of voltage model for electric-field-assisted ion-exchange method of glass-based waveguide

Modeling of Load Responses and Aging of High Strength Fibers Considering UV-radiation

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

Simulating Threshold Voltage Shift of MOS Devices Due to Radiation in the Low-dose Range

General Model for Defect Dynamics in Ionizing-Irradiated SiO<sub>2</sub>-Si Structures

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

A theoretical analytical model of temperature and irradiation dose dependent yield strength of metal materials under irradiation hardening effect

General Model for Defect Dynamics in Ionizing‐Irradiated SiO 2 ‐Si Structures

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Investigation of Irradiation Effects and Model Parameter Extraction for VDMOS Field Effect Transistor Exposed to Gamma Rays

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

A Statistical Model of Irradiation Hardening Induced by Non-Periodic Irradiation Defects

A Self-Consistent Plasticity Theory for Modeling the Thermo-Mechanical Properties of Irradiated Fcc Metallic Polycrystals

Time-domain response model of nonlinear dielectric properties for electrical field grading composites

General Model for Defect Dynamics in Ionizing‐Irradiated SiO <sub>2</sub> ‐Si Structures

A Model for Radiation-Induced Off-State Leakage Current in N-channel Metal-Oxide-semiconductor Transistors with Shallow Trench Isolation

Revealing the Temperature-Dependent Hardening Mechanisms of Non-Uniformly Distributed Defects for Ion-Irradiated Metals: Experiments and Modeling