First-Principles Study Of Electronic And Magnetic Properties Of Binio3

Mengqiu Cai,Guowei Yang,Yilin Cao,W. H. Yu,Lingling Wang,Yanguo Wang
DOI: https://doi.org/10.1063/1.2748840
IF: 4
2007-01-01
Applied Physics Letters
Abstract:First-principles calculations on the electronic and magnetic properties of BiNiO3 reveal that the G-type antiferromagnetic structure with the insulating ground state is more stable than other possible configurations. The hybridization of Ni-O and Bi-O leads to the reduction of the spin magnetic moment to 1.67 mu(B) in comparison with the Ni2+ d(8) configuration of 2 mu(B). The band gap of the antiferromagnetic insulating ground state is predicted to be 0.68 eV. The antiferromagnetic interaction induces the localized spins to be S=1 in the G-antiferromagnetic structure of BiNiO3. (c) 2007 American Institute of Physics.
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