Synthesis of Monocrystal Aluminum Nitride Nanowires at Low Temperature

Huimin Lv,Guangde Chen,Honggang Ye,Guojun Yan
DOI: https://doi.org/10.1063/1.2710290
IF: 2.877
2007-01-01
Journal of Applied Physics
Abstract:Hexagonal monocrystal aluminum nitride (h-AlN) nanowires are synthesized through the direct reaction of AlCl3 with NaN3 in a nonsolvent system at low temperatures. The h-AlN nanowires are characterized by the high-resolution transmission electron microscope, electron diffraction, x-ray diffraction, and photoluminescence spectra. The analysis shows that the nanowire has a long straight-wire morphology with a diameter ranging from 40to60nm, the longest one up to several micrometers, and they are of pure monocrystal hexagonal or face center structure which has a relatively narrow emission peak, centered at 413nm (3.00eV). In addition, a possible growth mechanism for h-AlN nanowire is discussed.
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