Performance analysis of multi-walled carbon nanotube based interconnects

Hong Li.,Wenyan Yin,Junfa Mao,Kaustav Banerjee

DOI: https://doi.org/10.1109/ISDRS.2007.4422493

2007-01-01

Abstract:In this paper, an equivalent distributed circuit model of MWCNTs is proposed for the first time. The performance of MWCNT based interconnect is evaluated and compared with Cu wires.

What problem does this paper attempt to address?

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Hong Li,Wen-Yan Yin,Kaustav Banerjee,Jun-Fa Mao

DOI: https://doi.org/10.1109/TED.2008.922855

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:Metallic carbon nanotubes (CNTs) have received much attention for their unique characteristics as a possible alternative to Cu interconnects in future ICs. Until this date, while almost all fabrication efforts have been directed toward multiwalled CNT (MWCNT) interconnects, there is a lack of MWCNT modeling work. This paper presents, for the first time, a detailed investigation of MWCNT-based inte...
Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Hong Li,Wen-Yan Yin,Jun-Fa Mao

DOI: https://doi.org/10.1109/apmc.2006.4429659

2006-01-01

Abstract:Metallic carbon nanotube (CNT) interconnect is regarded as a competitive candidate for next generation of interconnect. An equivalent transmission line model for CNT is proposed in this paper. In our model, the fundamental contact resistance (quantum resistance) is regarded as lumped while the scattering resistance is distributed. The performance of CNT interconnect is examined and compared with the Cu interconnect. It is found that CNT interconnects do not out-perform Cu wire at local interconnect level. However, they have better performance than Cu interconnect at intermediate and global interconnect level. With the technology advancing, their advantages could become greater.
Modeling of carbon nanotube (CNT) interconnects

Wenyan Yin,Wensheng Zhao

DOI: https://doi.org/10.1109/SPI.2011.5898845

2011-01-01

Abstract:Metallic carbon nanotube (CNT) interconnect has been regarded as a competitive candidate for next generation of interconnect. The equivalent circuit models of CNTs are investigated in this paper. Based on these models, the performance of CNT interconnects is predicted in comparison with Cu wire counterpart. Further, crosstalk effects in single-and double-walled CNT (SWCNT & DWCNT) bundle interconnect architectures are examined. It is found that compared with SWCNT bundle, the DWCNT one can lead to a reduction of crosstalk-induced time delay. Finally, electrothermal characterization of a metallic SWCNT interconnect array is performed, with self-heating effect treated carefully.
Circuit Modeling and Time Delay Analysis of Double-Walled Carbon Nanotube Interconnects

Ge Fu,Wenyan Yin

DOI: https://doi.org/10.1109/APMC.2007.4554555

2007-01-01

Abstract:An equivalent distributed circuit model of a double- walled carbon nanotube (DWCNT) is proposed in this paper. The comparison in time delay is made between double- and single- walled carbon nanotube (SWCNT) interconnects at different technology levels, such as local, intermediate and global levels. It is shown that using DWCNT the reduction of time delay, as much as 15% to 25% for intermediate and global interconnects, can be expected. Such improvement could be even better as the carbon nanotube(CNT) diameters increase, which offers potential applications in future interconnects.
Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

JiangPeng Cui,XiaoLong Xu,Wenyan Yin

DOI: https://doi.org/10.1109/EDAPS.2010.5682991

2010-01-01

Abstract:This paper presents hybrid analysis of through silicon multi-walled carbon nanotube vias. A set of equivalent lumped-element circuit models for two through silicon multi-walled carbon nanotube via (TS-MWCNTV) interconnects are proposed, with quantum effect treated appropriately. The methods for characterizing all frequency- and temperature-dependent RLCG parameters of a couple of TS-MWCNTVs are then given, including their effective capacitance, effective conductance, and characteristic impedance. Further, hybrid effects of frequency, as well as temperature on the conductance of open structure is examined. Also, the time delay of the TS-MWCNTV is studied.
Mini-Review: Modeling and Performance Analysis of Nanocarbon Interconnects

Wen-Sheng Zhao,Kai Fu,Da-Wei Wang,Meng Li,Gaofeng Wang,Wen-Yan Yin

DOI: https://doi.org/10.3390/app9112174

2019-01-01

Applied Sciences

Abstract:As the interconnect delay exceeds the gate delay, the integrated circuit (IC) technology has evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic interconnects face several serious challenges in aspects of performance and reliability. To address these issues, nanocarbon materials, including carbon nanotube (CNT) and graphene, have been proposed as promising candidates for interconnect applications. Considering the rapid development of nanocarbon interconnects, this paper is dedicated to providing a mini-review on our previous work and on related research in this field.
Comments on "Modeling of Metallic Carbon-Nanotube Interconnects for Circuit Simulations and a Comparison With Cu Interconnects for Sealed Technologies

Hong Li,W. -Y. Yin,Jun-Fa Mao

DOI: https://doi.org/10.1109/TCAD.2006.883920

IF: 2.9

2006-01-01

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Abstract:For original paper, see Raychowdhury and Roy, IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol.25, no.1, p.58-65, 2006 January
Carbon Nanotube Vias: Does Ballistic Electron–Phonon Transport Imply Improved Performance and Reliability?

Hong Li,Navin Srivastava,Jun-Fa Mao,Wen-Yan Yin,Kaustav Banerjee

DOI: https://doi.org/10.1109/ted.2011.2157825

IF: 3.1

2011-01-01

IEEE Transactions on Electron Devices

Abstract:This paper investigates the electron and phonon transport and their implications for performance and reliability of single-walled carbon nanotube (SWCNT), double-walled carbon nanotube (DWCNT), and multiwalled carbon nanotube (MWCNT) vias-possibly the most imminent application of carbon nanotube (CNT)-based components in very large scale integration chips. Accurate resistance and thermal conductance models are provided for isolated CNTs, as well as bundles of these, based on detailed electrical and thermal transport physics in the submicrometer regime. It is found that although CNT vias are both electrically and thermally in the ballistic regime, their electrical and thermal performance still cannot match that of Cu via. While the large resistance of CNT vias may not be a significant concern for local interconnects, the resistance must be minimized to avoid degradation of global interconnect performance. Furthermore, detailed 3-D electrothermal simulations indicate that Joule heating and thermal contact resistance between CNTs and metal can be a major bottleneck in extracting the maximum thermal performance from ballistic CNT bundle vias. From a processing perspective, we show that the applicability of MWCNT vias, which are currently being fabricated, is severely limited by their large thermal and electrical resistance. For SWCNT- and DWCNT-based vias, small-diameter CNTs with dense packing as well as good thermal and electrical contact between CNT and metal are needed.
Carbon Nanotube Vias: A Reality Check

Hong Li,Navin Srivastava,Jun-Fa Mao,Wen-Yan Yin,Kaustav Banerjee

DOI: https://doi.org/10.1109/iedm.2007.4418903

2007-01-01

Abstract:This paper presents a comprehensive electrothermal analysis of single-walled (SWCNT) and multi-walled carbon nanotube (MWCNT) vias-possibly the most imminent application of CNT-based components in VLSI chips. Accurate resistance and thermal conductivity models are provided for isolated SWCNTs and MWCNTs, as well as bundles of these, based on detailed electrical and thermal transport physics in sub-mum regime. It is found that although CNT via resistance may not be a significant concern for local interconnects, the resistance must be minimized in order to avoid significant degradation of global interconnect performance. Furthermore, detailed three dimensional electrothermal simulations show that Joule heating and the presence of thermal contact resistance between CNTs and metal, can be major bottlenecks in extracting maximum thermal performance from ballistic CNT bundle vias. From a processing perspective, we show that the applicability of MWCNT vias, which are currently being fabricated, is severely limited by their thermal and electrical resistance. For SWCNT vias, small diameter CNTs with dense packing and good thermal and electrical contacts between CNT and metal are needed.
Comparative Study on Multilayer Graphene Nanoribbon (MLGNR) Interconnects

Wen-Sheng Zhao,Wen-Yan Yin

DOI: https://doi.org/10.1109/temc.2014.2301196

IF: 2.036

2014-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:Based on an equivalent single-conductor (ESC) model of multilayer graphene nanoribbon (MLGNR) interconnects with side contacts, comparative study on their distributed parameters and transmission characteristics is performed in this paper. It is found that the number of conducting channels of a metallic MLGNR interconnect is the linear function of its width and Fermi energy, which can be described by an analytical equation. Its equivalent inductance and capacitance in the ESC model can also be characterized by a set of closed-form equations. Furthermore, according to the ITRS projection, transmission performance of the MLGNR interconnects with different contacts are predicted and compared with their Cu and carbon nanotube counterparts at different technology nodes. Also, some numerical results prove that MLGNR interconnects can provide better performance than Cu wires in particular at intermediate level. Even with the maximum crosstalk impacts considered, the advantage of MLGNR interconnects over Cu wires can still be kept.
Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Yun-Fan Liu,Wen-Sheng Zhao,Zheng Yong,Yuan Fang,Wen-Yan Yin

DOI: https://doi.org/10.1109/TNANO.2014.2307344

2014-01-01

IEEE Transactions on Nanotechnology

Abstract:One three-dimensional (3-D) carbon-based heterogeneous interconnect scheme, consisting of a couple of horizontal multilayer graphene transmission lines (MLG-TL) and vertical through silicon carbon nanotube bundle vias (TS-CNTBV), is proposed and investigated theoretically. For its realization, some metallic bumps are used to integrate MLG-TLs with TS-CNTBVs, and contact resistance among them are characterized and compared. The lumped-element circuit model of a couple of MLG-TLs is also combined with that of TS-CNTBVs, with anomalous skin effect treated in an appropriate way. Numerical studies are performed for capturing distributed parameters as well as transmission characteristics of MLG-TLs, TS-CNTBVs, and whole 3-D interconnects at different operating frequencies. It is believed that this study can provide some useful information about carbon-based heterogeneous interconnects, where both graphene and carbon nanotube advantages can be exploited for the future 3-D ICs.
Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Jing Jin,Wen-Sheng Zhao,Da-Wei Wang,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2017.8277009

2017-01-01

Abstract:The impacts of multi-walled carbon nanotube (MWCNT) through-silicon vias (TSVs) on the impedance characteristics of power delivery networks (PDNs) are investigated in this paper. The equivalent circuit model of the TSV array in the PDN is given and validated. On the basis of the circuit model, the impedance performances of stacked chip-PDNs based on MWCNT TSVs are evaluated and analyzed.
Carbon‐Based Interconnects for RF Nanoelectronics

Wen‐Sheng Zhao,Wen‐Yan Yin

DOI: https://doi.org/10.1002/047134608x.w8147

2012-01-01

Abstract:Abstract In this article, circuit‐oriented modeling techniques for both carbon nanotube (CNT) and graphene nanoribbon (GNR) interconnects will be introduced. Based on their circuit models, the transmission characteristics of single‐walled CNT (SWCNT), multiwalled CNT (MWCNT), and multilayered GNR (MLGNR) interconnects will be further shown theoretically. By taking the self‐heating effect (SHE) into account, temperature distribution along an SWCNT array and its transient thermal response will be demonstrated by solving a one‐dimensional heat conduction equation, together with its impact on the signal transmission characteristics examined. Then, theoretical analyses of both CNT‐ and graphene‐built very large‐scale integration interconnects will be presented. In particular, the concept of “almost‐carbon integration” will be proposed, where both CNT and graphene advantages are integrated effectively into future three‐dimensional integrated circuits.
Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Na Li,Junfa Mao,Wen-Sheng Zhao,Min Tang,Wenchao Chen,Wen-Yan Yin

DOI: https://doi.org/10.1109/tcpmt.2016.2538298

2016-01-01

IEEE Transactions on Components Packaging and Manufacturing Technology

Abstract:Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
Towards 3-D Carbon-Based Heterogeneous Interconnects

Jie Zheng,Xu-Chen Wang,Wen-Sheng Zhao,Gaofeng Wang,Wen-Yan Yin,Lingling Sun

DOI: https://doi.org/10.1109/nemo.2015.7414997

2015-01-01

Abstract:In this paper, the carbon-based interconnects such as the horizontal multilayer graphene (MLG) interconnects and the vertical carbon nanotube through-silicon vias (CNT TSV) are investigated. Based on the equivalent circuit model, the electrical performance of these carbon-based interconnects are studied. Furthermore, by combining them, one novel carbon-based 3-D interconnect is presented and studied. The heterogeneous structures are also proposed in order to exploit these nano-materials efficiently. It is shown that the Cu-graphene heterogeneous interconnects and Cu/CNT composite TSVs could be utilized to improve the reliability of future 3-D ICs.
Performance Analysis of CNTs as an Application for Future VLSI Interconnects

R. Chandel,Sandeep Sharma,P. K. Pal,R. Rathore

Abstract:This paper presents performance evaluation of different types of carbon-nanotubes(CNTs) based interconnects viz. Single-walled carbon nanotubes(SWCNT), Bundle SWCNT(B-SWCNT), Multiwalled CNT(M-WCNT) as well as Copper interconnects. The CNT-metal contact resistance has been taken into consideration in the model used in this work. In case of copper interconnects the effect of surface scattering and grain boundary scattering is accounted for. The effect of change in B-SWCNT packaging density on performance of B-SWCNT is analyzed for the first time. A method is proposed to find out the packaging density of a symmetric B-SWCNT structure. SPICE simulations verify the results for 45nm technology node.

Materials Science,Engineering,Physics
Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects

Shao-Ning Pu,Wen-Yan Yin,Jun-Fa Mao,Qing H. Liu

DOI: https://doi.org/10.1109/ted.2009.2014429

IF: 3.1

2009-01-01

IEEE Transactions on Electron Devices

Abstract:The crosstalk effects in single- and double-walled carbon-nanotube (SWCNT and DWCNT) bundle-interconnect architectures are investigated in this paper. Some modified equivalent-circuit models are proposed for both SWCNT and DWCNT bundles, where capacitive couplings between adjacent bundles are incorporated. These circuit models are further used to predict the performance of SWCNT and DWCNT bundle interconnects in comparison with the Cu wire counterpart at all interconnect levels for advanced future technology generations. It is found that, compared with the SWCNT bundle, the DWCNT bundle interconnect can lead to a reduction of crosstalk-induced time delay, which will be more significant with increasing bundle length, while the peak voltage of the crosstalk-induced glitch in SWCNT and DWCNT bundle interconnects is in the same order as that of Cu wires. Due to the improvement in time delay, it is numerically confirmed that the DWCNT bundle interconnect will be more suitable for the next generation of interconnect technology as compared with the SWCNT bundle counterpart.
High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Wen-Sheng Zhao,Jie Zheng,Yue Hu,Shilei Sun,Gaofeng Wang,Linxi Dong,Liyang Yu,Lingling Sun,Wen-Yan Yin

DOI: https://doi.org/10.1109/tnano.2016.2547999

2016-01-01

IEEE Transactions on Nanotechnology

Abstract:A high-frequency analysis of Cu-carbon nanotube (CNT) composite through-silicon vias (TSVs) is conducted. The electrical modeling of the Cu-CNT composite TSVs is performed, with the effective complex conductivity formulated for accurate characterization of kinetic inductance. It is shown that, after code-positing CNT with Cu, the electrical conductivity of the TSVs can be improved and the influence of kinetic inductance variation can be suppressed in comparison with the CNT TSVs. On the other hand, the Cu-CNT composite TSVs can exhibit little compromise in performance yet much enhanced reliability by comparison to the Cu counterpart. That is, the Cu-CNT composite TSVs can provide a better tradeoff between reliability and performance than the Cu and CNT counterparts.
Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Yunfan Liu,Zheng Yong,YanSong Jiao,Wensheng Zhao,Wenyan Yin

DOI: https://doi.org/10.1109/EDAPS.2012.6469391

2012-01-01

Abstract:In this paper, we at first propose an almost-carbon interconnects structure consisting of through-silicon carbon nanotube bundle vias (TS-CNTBV), graphene-based transmission lines (GTL) and metal bumps. In order to characterize its electrical performance, an effective complex conductivity of the CNT bundle is introduced and studied for different temperatures and CNT radii. Further, the TS-CNTBV transmission characteristics are investigated based on its distributed transmission line model, and in particular, effects of metallic bump attached to the TS-CNTBV are considered and treated in an appropriate way.
Repeater Insertion for Carbon Nanotube Interconnects

Wen-Sheng Zhao,Gaofeng Wang,Lingling Sun,Wen-Yan Yin,Yong-Xin Guo

DOI: https://doi.org/10.1049/mnl.2014.0001

2014-01-01

Micro & Nano Letters

Abstract:In this reported work, the effects of repeater insertion on the electrical performance of carbon nanotube (CNT) interconnects are studied theoretically. It is shown that the time delay of CNT interconnects, when the length becomes larger than the transition length, can be effectively suppressed by inserting a series of equispaced repeaters. Furthermore, the impact of contact resistance on the repeater insertion is examined and compared. As the single-walled CNT interconnects can endure large contact resistance, its optimal repeater insertion can be determined analytically by neglecting the contact resistances. However, for multi-walled CNT interconnects, the contact resistance must be taken into account in the design of optimal repeater insertion when it exceeds a certain value.

Performance analysis of multi-walled carbon nanotube based interconnects

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Modeling of carbon nanotube (CNT) interconnects

Circuit Modeling and Time Delay Analysis of Double-Walled Carbon Nanotube Interconnects

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Mini-Review: Modeling and Performance Analysis of Nanocarbon Interconnects

Comments on "Modeling of Metallic Carbon-Nanotube Interconnects for Circuit Simulations and a Comparison With Cu Interconnects for Sealed Technologies

Carbon Nanotube Vias: Does Ballistic Electron–Phonon Transport Imply Improved Performance and Reliability?

Carbon Nanotube Vias: A Reality Check

Comparative Study on Multilayer Graphene Nanoribbon (MLGNR) Interconnects

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Carbon‐Based Interconnects for RF Nanoelectronics

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Towards 3-D Carbon-Based Heterogeneous Interconnects

Performance Analysis of CNTs as an Application for Future VLSI Interconnects

Crosstalk Prediction of Single- and Double-Walled Carbon-Nanotube (SWCNT/DWCNT) Bundle Interconnects

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Repeater Insertion for Carbon Nanotube Interconnects