Enhanced Dielectric Properties In A Three-Phase Composite Induced By Microstructure Tailoring
Zhenchong Zhang,Yizhuo Gu,Shaokai Wang,Min Li,Jiayu Bi,Wei Zhang,Zuoguang Zhang
2015-01-01
Abstract:Polymer-matrix composites with excellent dielectric property have attracted great attentions due to their various potential applications, such as electrostatic energy storage device, embedded capacitors, actuators, and printed circuit boards. In general, for polymer filled by conductive and semi-conductive filler, a very high dielectric permittivity can be obtained at low filler loading. However, there are still some obstacles, such as high dielectric loss, high electrical conductivity and narrow processing window, which largely inhibit their practical applications. In this paper, a novel three-phase composite is proposed to achieve by introducing nano-size and micro-size barium titanate (BT) as an insulating phase in polyvinylidene fluoride (PVDF) matrix composite filled by semi-conductive silicon carbide whiskers (SiC). In the as-prepared SiC/PVDF two-phase composite, Scanning electron micrograph shows that a semi-conductive network of SiC whisker can be formed at the filler loading of 20 vol%. The dielectric permittivity can be increased to 396.6 with a high dielectric loss of 6.2 at testing frequency of 100 Hz. After the introduction of BT particles, the nano-size BT can be homogeneously distributed in the matrix and prevents the formation of the SiC whisker semi-conductive network. Thus, it is found that the BT/SiC/PVDF three-phase composite presents a greatly suppressed dielectric loss of 0.27 while a high dielectric permittivity of 213.8 is maintained filled with 15 vol% of nano-size BT. Additionally, further research demonstrates that the interfacial polarization process and electron conduction process in two-phase composite can be greatly enhanced by the semi-conductive network of SiC whisker and results in high dielectric permittivity and dielectric loss. The addition of BT, which effectively prevents the formation of semi-conductive networks, greatly restricts the electron conduction process. Therefore the high dielectric loss in three-phase composites can be suppressed at a very low value while a high dielectric permittivity is still maintained.