Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport
Mei Zhang,Juanxia Wu,Yiming Zhu,Dumitru O. Dumcenco,Jinhua Hong,Nannan Mao,Shibin Deng,Yanfeng Chen,Yanlian Yang,Chuanhong Jin,Sunil H. Chaki,Ying-Sheng Huang,Jin Zhang,Liming Xie
DOI: https://doi.org/10.1021/nn5020566
IF: 17.1
2014-01-01
ACS Nano
Abstract:Two-dimensional transition-metal dichalcogenide alloys have attracted intense attention doe to their tunable band gaps. In the present work, photoluminescence, Raman scattering, and electrical transport properties of monolayer and few-layer molybdenum tungsten diselenide alloys (Mo1-xWxSe2, 0 <= x <= 1) are systematically investigated. The strong photoluminescence emissions from Mo1-xWxSe2 monolayers indicate composition-tunable direct band gaps (from 156 to 1.65 eV), while weak and broad emissions from the bilayers indicate indirect band gaps. The first-order Raman modes are assigned by polarized Raman spectroscopy. Second-order Raman mocks are assigned according to its frequencies. As composition changes in Mo1-xWxSe2 monolayers and few layers, the out-of-plane A(1g) mode showed one-mode behavior, while B-29(1) (only observed in few layers), in-plane E-2g(1), and all observed second-order Raman modes showed two-mode behaviors. Secularl transport measurement revealed n-type semiconducting transport behavior with a high on/off ratio (>10(5)) for Mo1-xWxSe2 monolayers.