Abstract:Cu/BST/Pt/Ti/SiO 2/Si structure MIM capacitors were prepared by RF sputtering and microfabrication techniques. The effects of annealing time and film thickness on dielectric constant and leakage current density of BST were investigated. It indicated that the dielectric constant is increased by delaying the annealing time. The dielectric constant reached the highest value when BST has been annealed for 30 min and the leakage current is relatively low in this experiment. Reducing the film thickness will decrease the dielectric constant. The leakage current density under 0.1 MV/cm of 90 nm and 50 nm thickness BST thin film was 5.35 × 10 -8A/cm 2, 6 × 10 -6 A/cm 2 respectively.

Electric Properties of RF Sputtered Barium Strontium Titanate Thin Film