Immersion Barc for Hyper Na Applications Ii
Wan-Ju Tseng,Wen Liang Huang,Bill Lin,Bo Jou Lu,Tsung Ju Yeh,E. T. Liu,Chun Chi Yu,Sue Ryeon Kim,Jeong Yun Yu,Gerald Wayton,Sook Lee,Sabrina Wong,Chaoyang Lin,Maurizio Ciambra,Suzanne Coley,David Praseuth,Kathleen O'Connell,George Barclay
DOI: https://doi.org/10.1117/12.848454
2010-01-01
Abstract:Reflectivity control through angle is challenging at hyper NA, especially for Logic devices which have various pitches in the same layer. A multilayer antireflectant system is required to control complex reflectivity resulting from various incident angles. In our previous works, we showed the successful optimization of multilayer antireflectant systems at hyper NA for BEOL layers. In this paper, we show the optimization of new multilayer bottom anti-reflectant systems to meet new process requirements at 28nm node Logic device. During the manufacturing process, rework process is necessary when critical dimension or overlay doesn't meet the specifications. Some substrates are sensitive to the rework process. As a result, litho performance including the line width roughness (LWR) could change. The optimizations have been done on various stack options to improve LWR. An immersion tool at 1.35NA was used to perform lithography tests. Simulation was performed using Prolith (TM) software.