Multichip Parallel Double-Sided Cooling Silicon Carbide Power Module With Low Parasitic Inductance and Balanced Dynamic Current
Yiyang Yan,Jianwei Lv,Baihan Liu,Yifan Zhang,Jiaxin Liu,Cai Chen,Yong Kang
DOI: https://doi.org/10.1109/jestpe.2024.3451514
IF: 5.462
2024-10-04
IEEE Journal of Emerging and Selected Topics in Power Electronics
Abstract:The application of multichip parallel silicon carbide (SiC) power modules requires packages that have low parasitic inductance and balanced dynamic current among different devices. The traditional dynamic current sharing realization methods are not suitable for double-sided cooling (DSC) power modules. In this article, a novel structure with low parasitic inductance and balanced dynamic current sharing properties based on the flip-chip structure is proposed. To guide the dynamic current sharing design, a dynamic current sharing model considering mutual inductances that affect the gate and source voltage is proposed. According to the model analysis results, by adjusting the power terminal layout and the mutual inductance values between the power loop and driver loop, the proposed structure realizes dynamic current sharing. A flexible printed circuit (FPC) board is utilized to achieve the driver loop connection in the proposed structure, which is suitable for the flip-chip structure with multichip in parallel. Besides, the power loop of the proposed structure has the characteristic of a double-loop parallel connection and results in 3.5-nH low parasitic inductance. A three-chip parallel DSC power module is fabricated and tested. An FPC Rogowski coil is designed and utilized to measure the dynamic current of each device. The experiment results verify the performances of these two aspects.
engineering, electrical & electronic