Design and Simulation of a Light-Activated Darlington Transistor Based on a SiCGe/3C-SiC Hetero-Structure

Chen Zhiming,Ren Ping,Pu Hongbin

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.02.011

2006-01-01

Chinese Journal of Semiconductors

Abstract:A light-activated Darlington heterojunction transistor based on a SiCGe/3C-SiC hetero-structure is proposed for anti-EMI(electromagnetic interference) applications. The performance of the novel power switch is simulated using ISE. In comparison with the switches based on other polytypes of SiC, the design benefits from having fewer lattice mismatches between the SiCGe and 3C-SiC. A maximum common emitter current gain of about 890and superb light-activation characteristics may be achievable. The performance simulation demonstrates that the device has a good I-V characteristic with a turn-on voltage knee of about 4V.