Mutagenesis of Arabidopsis Thaliana by N+Ion Implantation

Zhang Genfa,Shi Xiaoming,Nie Yanli,Jiang Shan,Zhou Hongyu,Lu Ting,Zhang Jun
DOI: https://doi.org/10.1088/1009-0630/8/3/28
2006-01-01
Abstract:Ion implantation, as a new biophysically mutagenic technique, has shown a great potential for crop breeding. By analyzing polymorphisms of genomic DNA through RAPD-based DNA analysis, we compared the frequency and efficiency of somatic and germ-line mutations of Arabidopsis thaliana treated with N+ ion implantation and γ-rays radiation. Our data support the following conclusions: (1) N+ ion implantation can induce a much wider spectrum of mutations than γ-rays radiation does; (2) Unlike the linear correlation between the doses and their effect in γ-rays radiation, the dose-effect correlation in N+ ion implantation is nonlinear; (3) Like γ-rays radiation, both somatic and germ-line mutations could be induced by N+ ion implantation; and (4) RAPD deletion patterns are usually seen in N+ ion implantation induced mutation.
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