Abstract:A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that the local structure deviates from the average structure in both ferroelectric and paraelectric phases. We show that the crystal possesses several, inequivalent complex domain boundaries which show no sign of instability even 200 K above the ferroelectric-to-paraelectric phase transition temperature TC. Two types of boundaries are addressed. The first boundary was formed between ferroelectric domains below TC. This boundary remained stable up to the highest measurement temperatures, and stabilized the domains so that they had the same orientation after repeated heating and cooling cycles. These domains transformed normally to the cubic paraelectric phase. Another type of boundary was formed at 673 K and exhibited no signs of instability up to 923 K. The boundary formation was reversible: it formed and vanished between 573 and 673 K during heating and cooling, respectively. A model in which the crystal is divided into thin slices with different Zr/Ti ratios is proposed. The physical mechanism behind the thermal-stress-induced structural changes is related to the different thermal expansion of the slices, which forces the domain to grow similarly after each heating and cooling cycle. The results are interesting for non-volatile memory development, as it implies that the original ferroelectric state can be restored after the material has been transformed to the paraelectric phase. It also suggests that a low-symmetry structure, stable up to high-temperatures, can be prepared through controlled deposition of layers with desired compositions.

Phase Diagram of Ultrathin Pb(Zr0.5ti0.5)O-3 Films under Strain

Phase Diagram of Ferroelectric Batio3 Ultrathin Films under Open-Circuit Conditions

First-Principle Study of Strain-Driven Phase Transition in Incipient Ferroelectric Srtio3

Influence of depolarization field on temperature-misfit strain phase diagram of PbZr0.4Ti0.6O3 ultrathin films

Strain-temperature Phase Diagram of BaZrO3 with Antiferrodistortive Distortions

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Effect of Crystal Orientation on the Phase Diagrams, Dielectric and Piezoelectric Properties of Epitaxial BaTiO3 Thin Films

Impact Of Lattice Strain On The Phase Formation, Polarization, And Dielectric Constant Of Pbzr1-Xtixo3 Films

Unusual Vortex Structure in Ultrathin Pb(Zr0.5ti0.5)O-3 Films

Octahedral tilting, monoclinic phase and the phase diagram of PZT

Effects of Hydrostatic Pressure on Pb(Zr1−xTix)O3 Near the Morphotropic Phase Boundary

Electric-field-induced Phase Transitions in Co-Doped Pb(Zr1−xTix)O3at the Morphotropic Phase Boundary

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Strain-Induced Ferroelectric Phase Transitions in Incipient Ferroelectric Rutile Tio2

Strain-temperature phase diagram of BaZr O 3 with antiferrodistortive distortions

Phase Transition in PbTiO3 under Pressure Studied by the First-Principles Method

Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO3 by strain-mediated phase separation

A Highly Strained Phase in PbZr0.2Ti0.8O3 Films with Enhanced Ferroelectric Properties

A Highly Strained Phase in PbZr 0.2 Ti 0.8 O 3 Films with Enhanced Ferroelectric Properties

Phase Transitions and Domain Evolution in (pb, La)(Zr, Sn, Ti)O3 Single Crystal

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2