Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy
P. Xu,M.L. Ackerman,S.D. Barber,J.K. Schoelz,D. Qi,P.M. Thibado,V.D. Wheeler,L.O. Nyakiti,R.L. Myers-Ward,C.R. Eddy Jr.,D.K. Gaskill
DOI: https://doi.org/10.7567/JJAP.52.035104
2015-01-28
Abstract:Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area.
Mesoscale and Nanoscale Physics