Abstract:TiO2 is widely available as a chemically stable and harmless material. Recently, it has received a great deal of attention as a practical thermoelectric material. In this work, we studied the effects of aluminum (Al) doping concentration and lattice parameter on the thermoelectric properties of TiO2 at both room and high temperatures (475 degrees C). We found that the Al doping leads to a compression in the lattice constant and an increase in carrier concentration and consequently increases the electrical conductivity in the TiO2. We observed that the Al-doped TiO2 thin film shows a negative Seebeck coefficient and its value linearly decreases with increasing electrical conductivity. This result indicates that the Seebeck effect is developed by entropy-driven thermally assisted charge diffusion between low- and high-temperature surfaces. Further studies found that doping-induced reduction on entropy difference through electrical conductivity is accountable for the decrease of the Seebeck effect in the Al-doped TiO2. However, the Al doping can lead to phonon scattering at grain boundary interfaces and consequently decreases thermal conductivity. Therefore, the Al doping can essentially function as a mechanism to separately adjust electrical and thermal conductivities in the Al-doped TiO2. With Al doping, we obtained a maximal figure of merit (Z value) to be 1.30 at 475 degrees C and 0.48 At 23 degrees C from the Al-doped TiO2 at the doping concentration of 3%. The comparison of Z values between room and high temperatures confirms that thermally assisted charge diffusion and phonon scattering are two critical parameters for the development of efficient thermoelectric function in the Al-doped TiO2.

Effects of Al Doping on the Thermoelectric Performance of CoSi Single Crystal

Effects of Al Substitution for Si on Electronic Structure and Transport Performance of CoSi Single Crystal

Intrinsically Modified Thermoelectric Performance of Alkaline-Earth Isovalently Substituted [bi2ae2o4][coo2]y Single Crystals

Effects of Ni, Pd, and Pt Substitutions on Thermoelectric Properties of CoSi Alloys

Thermal Expansion and Thermal Diffusivity Properties of Co-Si Solid Solutions and Intermetallic Compounds

Effects of Ge and B substitution on thermoelectric properties of CoSi

Doping Effects on Internally Coupled Seebeck Coefficient, Electrical, and Thermal Conductivities in Aluminum-Doped Tio2

Influences of Al substitution on the Curie temperature and magnetocaloric effect of Gd2 CoSi2

Thermodynamic Properties and Phase Transitions of Ternary Co–Cu–Si Alloys with Equiatomic Co/Cu Ratio

Enhanced Thermoelectric Properties of Bi2Sr2Co2Oy by Alkali Metal Element Doping and SiC Dispersion

Synergistic Regulation of Electrical-Thermal Effect Leading to an Optimized Thermoelectric Performance in Co Doping N-Type Bi2(Te0.97Se0.03)3

Isovalent Substitutes Play In Different Ways: Effects Of Isovalent Substitution On The Thermoelectric Properties Of Cosi0.98b0.02

The Effect of Al-Substitution on Superconducting Type-I Clathrate Ba8si46

Electronic structure and transport properties of Co(Si1-xMx) (M = Al, P): First-principles study

A Quantitative Study on the Interaction Between Silicon Content and Heat Treatment on Thermal Conductivity of Al-Si Binary Alloys

Effect of Al-doping on the thermoelectric properties of CZTS thin film grown by sol-gel method

Thermoelectric properties of aluminum compound-doped α-SiC ceramics

Effects of V Doping on the Transport Performances of Crsi2 Single Crystals

Influence of Nitrogenizing and Al-doping on Microstructures and Thermoelectric Properties of Iron Disilicide Materials

WITHDRAWN: Effects of Al doping on the electronic structure and thermoelectric properties of single crystal CoSi

Thermoelectric Properties of Cu‐Doped Heusler Compound Fe2‐xCuxVAl