B-Site Doping Effect on Ferroelectric Property of Bismuth Titanate Ceramic

W Li,J Gu,CH Song,D Su,JS Zhu
DOI: https://doi.org/10.1063/1.2134877
IF: 2.877
2005-01-01
Journal of Applied Physics
Abstract:It is well known that doping can greatly affect the ferroelectric properties of Bi4Ti3O12: however, the mechanisms of the doping effect, especially doping at the B site, are not well understood. The effect of B-site doping with different ion sizes and valences on the remanent polarization and fatigue endurance was investigated to clarify the mechanism of B-site doping. The experimental results indicated that both the radius of doping ion and the concentration of oxygen vacancies have no certain relation with the enhancement of remanent polarization. However, oxygen vacancies play an important role in fatigue endurance in doped Bi4Ti3O12. The effect of B-site doping is briefly discussed.
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