Magnetoresistance Of La0.5sr0.5mno3 Nanoparticle Compact
Zhi-hong WANG,Tianhao Ji,Yiqian Wang,Xin Chen.,Runwei Li,JianWang Cai,Jirong Sun,Baogen Shen,Chunhua Yan
DOI: https://doi.org/10.1063/1.372457
IF: 2.877
2000-01-01
Journal of Applied Physics
Abstract:Magnetization, resistance, and current-voltage (I-V) measurements have been performed in La0.5Sr0.5MnO3 compact prepared by pressing sol-gel nanoparticles (46 nm) at 723 K with a high pressure (4 GPa). The pressed compound orders ferromagnetically at 340 K (T-C) and has a substantial drop in the thermomagnetic curve below 158 K (T-DP). After undergoing a metal-to-semiconductor transition at 140 K (T-MS), the compound reenters into a strong semiconducting state below 60 K, demonstrating a charge localized behavior induced by the small grain rather than the magnetic disorder which is related with the frozen spin clusters below T-DP. Instead of showing a feature near T-MS, the magnetoresistance (MR) ratio increases almost linearly with decreasing temperature. The large low field MR corresponding to the sharp rise of magnetization is obtained at 5 K and, evidenced as the spin polarized intergrain tunneling (SPIT) effect by the nolinear I-V curve. Although La0.5Sr0.5MnO3 has a relatively high T-C, the SPIT MR decays rapidly from 17.6% (5 K, 0.3 T) to 7.6% (150 K, 0.3 T), indicating that if trying to put the low field sensitivity of SPIT MR into application at room temperature, the selected compound having a higher T-C seems to be a prerequisite. (C) 2000 American Institute of Physics. [S0021-8979(00)92508-8].