Extremely large magnetoresistance in twisted intertwined graphene spirals
Yiwen Zhang,Bo Xie,Yue Yang,Yueshen Wu,Xin Lu,Yuxiong Hu,Yifan Ding,Jiadian He,Peng Dong,Jinghui Wang,Xiang Zhou,Jianpeng Liu,Zhu-Jun Wang,Jun Li
DOI: https://doi.org/10.1038/s41467-024-50456-0
2024-07-20
Abstract:Extremely large magnetoresistance (XMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, XMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moiré system, which demonstrates XMR owing to its topological structure and high-quality crystal formation. We investigate the electronic properties of three-dimensional intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3°. Notably, at 14 T and 2 K, the magnetoresistance of these structures reaches 1.7 × 107%, accompanied by a metal-insulator transition as the temperature increases. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the possible existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up possibilities for achieving XMR by engineering the topological structure of 2D layered moiré systems.