Combinatorial Studies of (1−x)na0.5bi0.5tio3−xbatio3 Thin-Film Chips

HW Cheng,XJ Zhang,ST Zhang,Y Feng,YF Chen,ZG Liu,GX Cheng
DOI: https://doi.org/10.1063/1.1794352
IF: 4
2004-01-01
Applied Physics Letters
Abstract:Applying a combinatorial methodology, (1−x)Na0.5Bi0.5TiO3−xBaTiO3 (NBT-BT) thin-film chips were fabricated on (001)-LaAlO3 substrates by pulsed laser deposition with a few quaternary masks. A series of NBT-BT library with the composition of BT ranged from 0 to 44% was obtained with uniform composition and well crystallinity. The relation between the concentration of NBT-BT and their structural and dielectric properties were investigated by x-ray diffraction (XRD), evanescent microwave probe, atomic force microscopy, and Raman spectroscopy. An obvious morphotropic phase boundary (MPB) was established to be about 9% BT by XRD, Raman frequency shift, and dielectric anomaly, different from the well-known MPB of the materials. The result shows the high efficiency of combinatorial method in searching new relaxor ferroelectrics.
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