4H-Sic Tetra-Lateral Position Sensitive Detector for Ultraviolet Measurements
Yifu Wang,Peichen Yang,Haoyu Du,Weizong Xu,Dong Zhou,Fangfang Ren,Dunjun Chen,Rong Zhang,Youdou Zheng,Hai Lu
DOI: https://doi.org/10.1109/ted.2024.3418720
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:In this work, a tetra-lateral 4H-SiC ultraviolet(UV) lateral-effect position-sensitive detector (PSD) formedby selective-area ion implantation has been manufacturedand characterized. The PSD with an 8x8 mm photosensi-tive area presents a low dark current of 6 pA, a fast rise timeof 12.6 mu s, a high detectivity of 2.0x1013cmHz0.5W-1,and a high responsivity of 0.13 A/W at 275 nm at 0 V.By applying transimpedance amplifier processing circuits,the PSD presents good 2-D position capability for UV lightspots with a nonlinearity of 9.8% within more than 75% ofthe photosensitive area. The PSD also shows obvious inde-pendence on the reverse bias voltage, the spot size, andthe incident light power. The interaction of the electrodesof PSD is considered to be the reason for nonlinearity bycomparing the output signals. Moreover, the applications ofprecise angle measurement have been realized using thisdevice as a sensor