Inner Gettering of Heavily-Doping Silicon for Cr

余学功,杨德仁,马向阳,杨建松,阙端麟

DOI: https://doi.org/10.3321/j.issn:0253-4177.2003.06.007

2003-01-01

Abstract:The IG (inner gettering) ability of heavily-doping silicon for Cr was investigated. After contaminating different concentration of Cr the samples are performed by three-step high-low-high IG annealing; the concentrations of Cr are measured by TRXF (total reflection X-ray fluorescopy). It was concluded that the IG ability of boron heavily-doped wafer for Cr is the strongest.