Fabrication, Patterning and Luminescence Properties of X2–Y2SiO5:A (a=eu3+, Tb3+, Ce3+) Phosphor Films Via Sol–gel Soft Lithography
XM Han,J Lin,J Fu,RB Xing,M Yu,YH Zhou,ML Pang
DOI: https://doi.org/10.1016/j.solidstatesciences.2004.02.004
IF: 3.752
2004-01-01
Solid State Sciences
Abstract:X2–Y2SiO5:A (A=Eu3+, Tb3+, Ce3+) phosphor films and their patterning were fabricated by a sol–gel process combined with a soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM), scanning electron microscopy (SEM) optical microscopy and photoluminescence (PL) were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 900°C with X1–Y2SiO5, which transformed completely to X2–Y2SiO5 at 1250°C. Patterned thin films with different band widths (5 μm spaced by 5 μm and 16 μm spaced by 24 μm) were obtained by a soft lithography technique (micromoulding in capillaries, MIMIC). The SEM and AFM study revealed that the nonpatterned phosphor films were uniform and crack free, and the films mainly consisted of closely packed grains with an average size of 350 nm. The doped rare earth ions (A) showed their characteristic emissions in X2–Y2SiO5 phosphor films, i.e., 5D0–7FJ (J=0,1,2,3,4) for Eu3+, 5D3, 4–7FJ (J=6,5,4,3) for Tb3+ and 5d (2D)–4f (2F2/5, 2/7) for Ce3+, respectively. The optimum doping concentrations for Eu3+, Tb3+ were determined to be 13 and 8 mol% of Y3+ in X2–Y2SiO5 films, respectively.