Doping Level Increase of Poly(3-Methylthiophene) Film During Electrochemical Polymerization Process

JK Xu,GQ Shi,FE Chen,XY Hong
2002-01-01
Chinese Journal of Polymer Science
Abstract:The Raman spectra of poly(3-methylthiophene) (PMeT) films with different thicknesses, which have been electrochemically deposited on a flat stainless steel electrode surface by direct oxidation of 3-methylthiophene in boron trifluoride diethyl etherate (BFEE) at a constant applied potential of 1.38 V (versus SCE), have been investigated by excitation with a 633-nm laser beam. The spectroscopic results demonstrated that the doping level of PMeT film was increasing during film growth. This finding was also confirmed by electrochemical examination. Moreover, the Raman bands assigned to radical cations and dications in doped PMeT films were found approximately at 1420 and 1400 cm(-1), respectively. Radical cations and dications coexist on the backbone of PMeT as conductive species and their concentrations increase with the increase of doping level. Successive cyclic voltammetry was proved to be an effective approach to improving the doping level of as-grown thin compact PMeT film.
What problem does this paper attempt to address?