Scaling Behavior of Magnetoresistance with the Layer Number in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Cr</mml:mi><mml:mi mathvariant="normal">I</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> Magnetic Tunnel Junctions
Baochun Wu,Jie Yang,Ruge Quhe,Shiqi Liu,Chen Yang,Qiuhui Li,Jiachen Ma,Yuxuan Peng,Shibo Fang,Jun-jie Shi,Jinbo Yang,Jing Lu,Honglin Du
DOI: https://doi.org/10.1103/physrevapplied.17.034030
IF: 4.6
2022-01-01
Physical Review Applied
Abstract:Two-dimensional (2D) van der Waals (vdW) magnetic semiconductors have attracted wide interest for their promising application in next-generation spintronic devices. We investigate the scaling behavior of the tunnel magnetoresistance (TMR) of the $\mathrm{Ag}/$n-layer ${\mathrm{Cr}\mathrm{I}}_{3}/\mathrm{Ag}$ and graphite/n-layer ${\mathrm{Cr}\mathrm{I}}_{3}$/graphite magnetic tunnel junctions (MTJs) by using ab initio quantum-transport simulations. The calculated monotonic increasing TMR of the graphite/n-layer ${\mathrm{Cr}\mathrm{I}}_{3}$/graphite MTJ with n = 2--4 at zero bias agrees with the experimental value. The TMR of the $\mathrm{Ag}/$n-layer ${\mathrm{Cr}\mathrm{I}}_{3}/\mathrm{Ag}$ MTJ generally increases with the tunnel-barrier layer number, n, that is, from 200% (2-layer ${\mathrm{Cr}\mathrm{I}}_{3}$) to a record ${10}^{9}$% value (12-layer ${\mathrm{Cr}\mathrm{I}}_{3}$) at zero bias but has an odd-even oscillation when n 7. When we apply a bias voltage to the $\mathrm{Ag}/$2-layer ${\mathrm{Cr}\mathrm{I}}_{3}/\mathrm{Ag}$ MTJ, the TMR first decreases slightly and then increases, followed by a monotonic decrease. The noncollinear magnetization direction of the ${\mathrm{Cr}\mathrm{I}}_{3}$ layers also changes the TMR value of the graphite/n-layer ${\mathrm{Cr}\mathrm{I}}_{3}$/graphite MTJ relative to the collinear case, a result in agreement with experiments.