Abstract:BaTiO3 has a wide range of applications in microelectromechanical systems and integrated circuits due to its excellent dielectric, ferroelectric, piezoelectric, and pyroelectric properties. For the applied research and device applications of BaTiO3 films, reducing its deposition temperature to be compatible with the CMOS-Si technology is an important challenge. Here, with the help of a LaNiO3 buffer layer which has a closely-matched lattice with BaTiO3, (001)-textured BaTiO3 films were sputter-deposited at 450 degrees C on single crystalline Si(100) substrates, which consist of well-cryotallized, evenly-distributed columnar nanograins with an average grain size of 27 nm. Our result showed that this deposition temperature can maintain the columnar nanograin structure with a relatively large grain size, leading to a good ferroelectric performance. In addition, a small residual strain on Si was also helpful to improve its ferroelectric and dielectric properties. The remnant polarization and saturated polarization of these BaTiO3 films reached 7 and 43.C.cm(-2), respectively, while leakage current densities were as low as 10-5 A.cm(-2) at an applied electric field of 0.8 MV.cm(-1). These BaTiO3 films also displayed excellent frequency stability with a low dielectric loss. The relative dielectric constant was measured to be similar to 155 at 1 kHz, slightly being reduced to similar to 145 after the frequency increased to 1 MHz. Meanwhile, the dielectric loss slightly increased from 0.01 at 1 kHz to 0.03 at 1 MHz. Lastly, through capacitance-voltage (C-V) tests, these films exhibited a large dielectric tunability of similar to 51% and a figure of merit (FOM) of similar to 17 (@1 MHz). These films have a good potential for applications in tunable dielectrics.

Thermally Tuning of the Photonic Band Gap of SiO2 Colloid Crystal Infilled with Ferroelectric BaTiO3

Large Electrostrain and High Optical Temperature Sensitivity in BaTiO3-(Na0.5Ho0.5)TiO3 Multifunctional Ferroelectric Ceramics

Double Modes Characterization and Incident Light Angle Tuning on the Photonic Band Gap of Sio2 Colloid Crystal

Temperature-modified Photonic Bandgap in Colloidal Photonic Crystals Fabricated by Vinyl Functionalized Silica Spheres

Photonic Band Gap in Thickness Dependent SiO2 Colloidal Crystals

Tailoring Electromechanical Performance in BiScO3-modified Bi0.5Na0.5TiO3-based Lead-Free Piezoceramics

Modulation of Three Dimensional Photonic Band Gap in Visible Region

Fabrication of Silicon Inverse Opal Photonic Crystal with A Complete Photonic Band Gap in Mid Infrared Range and Its Optical Properties

Controlled Tuning of the Stop Band of Colloidal Photonic Crystals by Thermal Annealing

Temperature Tunable Photonic Band Gap Crystals Based on Liquid-Infiltrated Inverse Opal Structure

Photonic Band Gap Properties of Three-Dimensional Sio2 Photonic Crystals

Columnar Nanograined BaTiO3 Ferroelectric Thin Films Integrated on Si with a Sizable Dielectric Tunability

Effect of strain on the Curie temperature and band structure of low-dimensional SbSI

Silicon Integrated Bi2TbFe5O12 Thin Films for O-band Nonreciprocal Photonic Device Applications

Preparation and Photonic Properties of SiO2 / CdS Photonic Crystal

Fabrication and performance of a medium-dependent SiO_2/Si photonic heterostructure device

Tailoring the room temperature ferroelectric/paraelectric state in polycrystalline (Ba 0.70 Sr 0.30 )TiO 3 thin films for silicon compatible integration

Ferroelectric Inverse Opals with Electrically Tunable Photonic Band Gap

Crystallization, phase evolution and ferroelectric properties of sol-gel-synthesized Ba(Ti0.8Zr0.2)O3-x(Ba 0.7Ca0.3)TiO3 thin films

Photoluminescence Properties of Sio2:Tb3+ Inverse Opal with Tunable Photonic Band Gap

Tuning the Band Gap of Self-Assembled Superparamagnetic Photonic Crystals in Colloidal Magnetic Fluids Using External Magnetic Fields