Field Effect Transistor with Self-Organized In0.15ga0.85as/Gaas Quantum Wires As A Channel Grown on (553)B Gaas Substrates

XJ Li,FW Yan,WJ Zhang,RG Zhang,WJ Liu,JP Ao,QM Zeng,SY Liu,CG Liang

DOI: https://doi.org/10.1063/1.1365949

IF: 4

2001-01-01

Applied Physics Letters

Abstract:Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-beam epitaxy. The density of the QWRs is as high as 4.0×105 cm−1. The strong photoluminescence peak at λ=868 nm from the (553)B QWRs shows a large polarization anisotropy [p=(I∥−I⊥)/(I∥+I⊥)=0.22] and a very small full width at half maximum of 9.2 meV at 12 K. Based on the modulation-doped (553)B QWR structure, self-organized QWR field-effect transistors were fabricated (the channel along the QWRs’ direction). The devices demonstrate very good saturation characteristics and pinch-off behavior at room temperature. A maximum transconductance (gm) of 135 mS/mm is measured for 2 μm gate-length devices.