Abstract:Motivated by applications of second-order nonlinear capacitances in semiconductor measurements of charge carrier densities, we investigate the profound relationship between the second-order nonlinear emittance and the total and partial local densities of states for tunnelling transport in nanoscale systems with ac bias. We have derived an explicit formula for the second-order nonlinear emittance in the case of low frequencies. The difference between the emittance and capacitance in actual measurements is elaborated; and we show that the total density of states completely determine the second-order nonlinear emittance. Our study indicates that the second-order nonlinear emittance equals the second-order nonlinear electrochemical capacitance when there is no tunnelling current and the density of states is macroscopic. Also, in the quantum regime, the second-order emittance does not vanish even if the pure geometric capacitance equals zero. Based on our results, we present an application of the second-order nonlinear emittance in nanoscale systems.

The Applications of Nonlinear Dynamic Admittance in Nanostructures