Sensing Characteristics of WO 3 Thin Film As NO 2 Gas Sensor

XL He,JP Li,XG Gao
DOI: https://doi.org/10.1117/12.440189
2001-01-01
Abstract:The WO3 thin films were prepared by magnetron sputtering method on the 3mmx3mm silicon substrates with Pt interdigitating electrodes and heater. The deposition and the operating temperatures were analyzed to optimize the technological parameters. The sensing properties of these films to NO2 gas were measured. The results indicate that the sensitivities are strongly dependent on the deposition and operating temperatures. The WO3 thin film deposited at 300 degreesC and then annealed in air at 600 degreesC for 4h shows the excellent sensing properties to NO2 gas at the operating temperature of 250 degreesC.
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