In-Phase Wavelength Conversion in Semiconductor Optical Amplifier in Critical Lasing State

Xin-liang ZHANG,Jun-qiang SUN,De-ming LIU,De-xiu HUANG,He-qing YI
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.05.023
2001-01-01
Abstract:In-phase wavelength conversion based on critical lasing state in a semiconductor optical amplifier has been demonstrated.The facet residual reflectivity of the SOA is only 10-4 order that is not low enough to achieve an absolute travelling-wave amplification at large biased current,and the SOA will become a quasi-laser at certain biased current.SOA working in this critical state,the gain of the CW probe signal would be modulated by the competition between the amplified spontaneous emission and the amplification of the input signals.This conversion mechanism serves to achieve the wavelength conversion with simple structure and preferable extinction ratio performance.Whereas,it shows that its conversion efficiency and noise performance are not so good,compared with the traditional XGM wavelength conversion scheme.
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