Drift Mobility of Semiconductive La0.5sr0.5coo3 Films Measured Using the Traveling Wave Method

J Yin,L Wang,JM Liu,KJ Chen,ZG Liu,Q Huang
DOI: https://doi.org/10.1063/1.125823
IF: 4
2000-01-01
Applied Physics Letters
Abstract:The conductivity and the drift mobility of La0.5Sr0.5CoO3 films deposited on fused silica substrates at 650 °C by pulsed-laser deposition have been measured by using the traveling-wave method. At room temperature, La0.5Sr0.5CoO3 films with semiconductivity have a hole density of 1×1021 cm−3, and drift mobility of 0.01 cm2/V s. The films underwent a paraferromagnetic transition around 240 K. The hopping process and tunneling effect of small polarons may be responsible for the conductive behavior above the Curie temperature.
What problem does this paper attempt to address?