Abstract:Generating high output powers while achieving narrow line single mode lasing are often mutual exclusive properties of commercial laser diodes. For this reason, efficient and scalable amplification of narrow line laser light is still a major driving point in modern laser system designs. Commonly, injection locking of high-power semiconductor laser diodes are used for this purpose. However, for many laser diodes it is very challenging to achieve stable operation of the injection locked state due to a complex interplay of non-linearities and thermal effects. Different approaches of active or passive stabilization usually require a large overhead of optical and electrical equipment and are not generally applicable. In our work we present a passive stabilization scheme, that is generally applicable, technically easy to implement and extremely cost-effective. It is based on the externally synchronized automatic acquisition of the optimal injection state. Central to our simple but powerful scheme is the management of thermalization effects during lock acquisition. By periodical relocking, spectrally pure amplified light is maintained in a quasi-CW manner over long timescales. We characterize the performance of our method for laser diodes amplifying 671 nm light and demonstrate the general applicability by confirming the method to work also for laser diodes at 401 nm, 461 nm and 689 nm. Our scheme enables the scaled operation of injection locks, even in cascaded setups, for the distributed amplification of single frequency laser light.

Theoretic and Experimental Study on Large-Frequency-Difference Side-Mode Injection Locking of High Power Semiconductor Lasers for Laser Cooling

Side-Mode Injection Locking Characteristics of 150 Mw Algaas Semiconductor Lasers

Mode-locking of Monolithic Laser Diodes Incorporating Coupled-Resonator Optical Waveguides.

Thermal Effects in High-Power Double Diode-End-Pumped Cs Vapor Lasers

Experimental research on semiconductor laser injection locking and its stability

Two-Mode Injection-Locking Analysis of Fabry-Perot Laser for Optically Generating Millimeter Wave Signal in Rof System

Frequency Noise Performance Improvement of Mutually Injection-Locked Semiconductor Lasers

Long-term stable laser injection locking for quasi-CW applications

Microwave Signal Generation With The Frequency-Selective Sideband Injection-Locking Of Semiconductor Lasers

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Selection of parameters in laser-amplifier injection locking

Linewidth Narrowing Of Mutually Injection Locked Semiconductor Lasers With Short And Long Delay

Selection of parameters in laser-amplifier injection locking - art. no. 68240Q

Investigation of Regime Switching from Mode Locking to Q-switching in a 2 Μm InGaSb/AlGaAsSb Quantum Well Laser

Numerical investigation into the injection-locking phenomena of gain switched lasers for optical frequency comb generation

Experimental Study on Raman Laser Phase Noise of Injection Locking Based on Electro-Optic Modulation

Investigation Of Regime Switching From Mode Locking To Q-Switching In A 2 Mu M Ingasb/Gaassb Quantum Well Laser

Modeling of mode locking in a laser with spatially separate gain media

Improved Noise Characteristics of Mutually Injection Locked Semiconductor Lasers in a Weak Coupling Regime

A 1-μm-Band Injection-Locked Semiconductor Laser with a High Side-Mode Suppression Ratio and Narrow Linewidth

Precision and broadband frequency swept laser source based on high-order modulation-sideband injection-locking.