Abstract:Speed and reliability of magnetic domain wall (DW) motion are key parameters that must be controlled to realize the full potential of DW-based magnetic devices for logic and memory applications. A major hindrance to this is extrinsic DW pinning at specific sites related to shape and material defects, which may be present even if the sample synthesis is well controlled. Understanding the origin of DW pinning and reducing it is especially desirable in electrochemically-deposited cylindrical magnetic nanowires (NWs), for which measurements of the fascinating physics predicted by theoretical computation have been inhibited by significant pinning. We experimentally investigate DW pinning in Co$_x$Ni$_{100-x}$ NWs, by applying quasistatic magnetic fields. Wire compositions were varied with $x=20,30,40$, while the microstructure was changed by annealing or varying the pH of the electrolyte for deposition. We conclude that pinning due to grain boundaries is the dominant mechanism, decreasing inversely with both the spontaneous magnetization and grain size. Second-order effects include inhomogeneities in lattice strain and the residual magnetocrystalline anisotropy. Surface roughness, dislocations and impurities are not expected to play a significant role in DW pinning in these wire samples.

MAGNETIC VISCOSITY AND DOMAIN WALL PINNING IN Nd-Fe-B MAGNET DOPED Sn AT 423 K

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Origin of Pinning Enhancement in a Ferromagnet-Superconductor Bilayer

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A material view on extrinsic magnetic domain wall pinning in cylindrical CoNi nanowires

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Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point

Spin Orbit Torques Induced Magnetization Reversal Through Asymmetric Domain Wall Propagation in Ta/CoFeB/MgO Structures