STUDIES ON THE PROPERTIES OF THE HETEROJUNCTION BETWEEN CuPc-G-Pan/Perylenes

Wei Feng,Wei Wei,Meng Cao,Hongcai Wu
DOI: https://doi.org/10.3321/j.issn:0254-0096.2000.04.008
2000-01-01
Abstract:Polyaniline was modified by grafting with copper-phthalocyanine(CuPc-G-Pan), which was used as the p-type material in the organic p-n heterojunction. The device consists of an indium-tin oxide/CuPc-G-Pan(p-type)/perylenes (n-type)/Al structure. The device shows rectifying properties and photovoltaic effects. The open-circuit photovoltage as high as 0.802 V and the short-circuit photocurrent of about 41 μA/cm 2/ under 37.2 W/ 2 illumination were obtained. The conversion efficiency reaches 0.51% with a fill factor of 58% under the experimental condition, which is greater than that of a Schottky barrier based on CuPc-G-Pan and perylenes. The electric and photovoltaic properties of the heterojunction were investigated by measuring current-voltage (I-V) and capacitance-voltage(C-V) characteristics. The I-V characteristics reveal that the diode quality factor is about 6.3 which is greater than unity. The C-V characteristics indicate that a depletion layer of about 231 nm exists at CuPc-G-Pan/perylenes interface.From the analysis of the optical absorption of the CuPc-G-Pan/perylenes layer, it is concluded that the photoactive layer is formed at CuPc-G-Pan/perylenes interface and both ITO and Al form the ohmic contact. The charge transport mechanism in the dark and under illumination has been investigated by detailed analysis of the optical absorption spectra, rectification and capacitance measurements.
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