Abstract:Geometries, growth patterns, and electronic properties of (InN)(12n) nanoclusters are investigated at the GGA-PBE level with LanL2DZ basis set for In atoms and 6-31G(d) basis set for N atoms. Based upon the optimized geometries, growth patterns are discussed and the geometries of ground state of (InN)(12n) nanoclusters deviate slightly to their higher symmetries; The relative stabilities of (InN)(12n) in terms of calculated fragmentation energies are considered, the remarkable magic numbers of stabilities are assigned as n = 4, 6, and 8, the newly formed (InN)(48) is selected as the new formed building block for cluster-assembled film nanomaterials; Furthermore, the odd-even oscillation and the even-numbered nanoclusters are bigger than the odd-numbered ones, reflecting that the nanoclusters with even-numbered In12N12 units have stronger stability than those with odd-numbered In12N12 units. The calculated charge-transfers of the most stable (InN)(12n) nanoclusters are increased as the cluster's size being extended, reflecting that the ionic bonding becomes stronger as the size of nanocluster is increased; the ionic bonding and static interactions enhance the stabilites of the newly formed (InN)(12n) nanoclusters. The calculated energy gaps are decreased with size of nanoclusters being increased, reflecting that quantum size effect is indirectly exhibited; Moreover, the energy gaps at the regions of 1.98-2.46 eV indicate that the (InN)(12n) nanoclusters being assembled by the In12N12 units are the distinct semiconductor nanomaterials and have potential applications in nanosciences and nanotechnologies, particular for the application in energy and photoelectronic devices.

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