Abstract:Sequential cation cross-substitution in zinc-blende chalcogenide semiconductors, from binary to ternary to quaternary compounds, is systematically studied using first-principles electronic structure calculations. Several universal trends are found for the ternary and two classes of quaternary chalcogenides, for example, the lowest-energy structure always has larger lattice constant a, smaller tetragonal distortion parameter =c /2a, negative crystal-field splitting at the top of the valence band, and larger band gap compared to the metastable structures for common-row cation substitution. The band structure changes in the cation substitution are analyzed in terms of the band offsets and band character decomposition, showing that although the band gap decreases from binary II-VI to ternary I-III-VI2 are mostly due to the p−d repulsion in the valence band, the decreases from ternary I-III-VI2 to quaternary I2-II-IV-VI4 chalcogenides are due to the downshift in the conduction band caused by the wave-function localization on the group IV cation site. We propose that common-row-cation I2-II-IV-VI4 compounds are more stable in the kesterite structure, whereas the widely assumed stannite structure reported in the literature for experimental samples is most likely due to partial disorder in the I-II 001 layer of the kesterite phase.

Lattice constant and energy gap of beryllium based II-VI widegap quaternary

Ab Initio Calculation of Lattice Dynamics and Thermodynamic Properties of Beryllium

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

Calculation Methods of Ingaassb Quaternary Alloy Band Gap

Band-Gap Nonlinearity in Lead Chalcogenide (PbQ, Q = Te, Se, S) Alloys

Bandgaps and band bowing in semiconductor alloys

Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdZnSe

Calculation of ternary systems containing III-V and II-VI compound phases

The Elasticity, Anisotropy and Thermodynamic Properties of Binary and Ternary B–Sc Compounds: First-principles Calculations

Density functional study of beryllium clusters, with gradient correction

First-principles Prediction of Structure, Mechanical and Thermodynamic Properties of BixGeyOz Ternary Bismuth Crystals

A Modified Simplified Coherent Potential Approximation Model of Band Gap Energy of III–V Ternary Alloys

A Discrete Lattice Plane Analysis of Coherent F.c.c./b1 Interfacial Energy

The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties

Theoretical study of BexZn1-xO alloys

Bonds, bands, and bandgaps in tetrahedrally bonded ternary compounds: the role of group V Lone Pairs

Theoretical Calculation of Crystal Cohesive Energy of (zrti)b2 Solid-Solutions

Coherent Interfacial Energy and Composition Profiles in Ternary FCC Systems by a Discrete Lattice Plane Analysis

First-principles Study of the Structural, Electronic and Elastic Properties of Ternary Zr2AN (a=ga, in and Tl)