Abstract:We investigate the static and dynamic characteristics of the widely tunable V-cavity semiconductor laser using the time-domain traveling-wave method. The theoretical model is presented. The simulation results are compared with experimental data for an all-active V-cavity laser, and good agreements are obtained. To improve the device performance, a new device structure with passive tuning waveguides is designed. The numerical results show that 21 channels can be achieved by single electrode tuning using carrier injection effect with two cavities of 420 and 440 mu m long. Dynamic wavelength switching between different channels is simulated. Mode competition is observed during the transient and the switching delay time varies from 3 to 18.5 ns for different switching paths. A simple algorithm for quasi-continuous tuning is developed for the first time by varying the injection currents on the channel selector electrode and the fine-tuning electrode synchronously. A quasi-continuous tuning of 16.8 nm is achieved with a current variation of less than 20 mA on each electrode. For direct modulation characteristics, small signal response simulation is carried out by an impulse current injection with a fast Fourier transform algorithm, and a 3 dB bandwidth of 7 GHz is obtained when biased at 100 mA. Moreover, 2.5 and 10 Gb/s direct intensity modulation are also demonstrated. The simulation results show great potential for the compact and low-cost tunable laser to be used for wavelength-agile access and data center networks, as well as biomedical applications. (C) 2015 Optical Society of America

External-cavity semiconductor laser with a wide piezoelectric tuning range

Programmable Wide Band Wavelength Tuning External-Cavity Semiconductor Laser

External Cavity Diode Laser Around 657 Nm

40Nm Quasi-Continuous Wavelength Tuning of V-cavity Semiconductor Laser

Programmable Tuning External Cavity Laser Diode

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Widely Tunable Semiconductor Laser Based on Double Half-Wave-Coupled Rectangular Ring Resonators

Electro-optically Tunable Microwave Source Based on Composite-Cavity Microchip Laser

High power external cavity semiconductor laser

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Mode-hop-free electro-optically tuned external-cavity diode laser using volume Bragg grating and PLZT ceramic

894 nm external cavity diode laser

Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure

Thermally-Tuned Silicon Double Ring Resonator for External Cavity Tunable Laser

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Modeling of Widely Tunable V-cavity Semiconductor Laser Using Time-Domain Traveling-Wave Method

Electrically Tunable Polymer Whispering-Gallery-Mode Laser

Frequency Stabilization of Tunable Narrow-Linewidth External-Cavity Semiconductor-Lasers