Abstract:The electronic states in quaternary GaInAsSb/AlGaAsSb strained quantum well (QW) structures grown by molecular beam epitaxy have been investigated both theoretically and experimentally. For strained multiple quantum wells (MQWs), strong luminescence, and well-resolved excitonic absorption peaks are observed even at room temperature, which is indicative of the good quality of our quaternary sample. By fitting the experimental results to the theoretical calculations, we find that the light holes are in well regions (type I MQWs) and the conduction band offset ratio . The critical temperature for the excitonic-polariton - mechanical-exciton transition in this quaternary MQW structure was found to be . The measured intersubband absorption of about is in good agreement with the theoretical calculation. The transition from type I MQWs to type II MQWs for light holes is also predicted theoretically. In the photoluminescence spectra the sharp exciton resonances have been attributed to localized excitons for temperature and to free excitons at higher temperatures up to room temperature. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly that of the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. The strength of the exciton - phonon coupling is determined from the linewidth analysis. The inhomogeneous linewidth and homogeneous broadening in both MQW and single-quantum-well (SQW) structures have been discussed. We conclude that the experimental result of stronger exciton - phonon coupling in the quaternary SQW structure will lead to partial ionization of excitons at higher temperatures (above 125 K), in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination.

Exciton transition energies in InxGa1-xAs/InP SMQWs as a function of indium composition

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Temperature dependent photoluminescence study of In0.63Ga0.37As/InP compressively strained single quantum wells

Optical Properties of Quaternary GaInAsSb/AlGaAsSb Strained Quantum Wells

Photoluminescence of Quaternary GaInAsSb/AlGaAsSb Strained Multiple Quantum Wells

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Room-Temperature Excitons in Strained Ingaas/Gaas Quantum-Wells

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Intersubband Transitions in InxGa1-xAs/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection

Photoluminescence Studies Of Modulation-Doped In0.60ga0.40as/In0.52al0.48as Strained Multiple-Quantum Wells

GSMBE growth and characterization of InxGa1 − xAsInP strained-layer MQWs in a P-i-N Configuration

Exciton States In Wurtzite Ingan Coupled Quantum Dots

Investigation of Localized State Emissions in Quaternary InGaAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum Wells