On the development of SiGe/Si directional coupler

Yong Gao,Guozheng Li,Enke Liu,Cezhou Zhao,Xiding Liu,Xiangjiu Zhang,Xuekun Lu,Xun Wang
1996-01-01
Abstract:The SiGe/Si (x=0.05) directional coupler was fabricated by using both the MBE method and the KOH anisotropic etching based on analyzing the structural parameters of the SiGe/Si directional coupler through using the single-mode conditions of SiGe ridge waveguides and the effective index methods. The measurement result on the coupler shows that its average coupling efficiency is 98.1% at ��=1.3 ��m, and its average crosstalk is below-18.6dB.
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