Study of ultrashort optical pulse generation by gain switching of semiconductor lasers

Gang Jia,Maobin Yi,Wei Sun,Dingsan Gao

1996-01-01

Abstract:Ultrashort optical pulse generation by gain switching of semiconductor lasers was analysed theoretically and studied experimentally. The conclusions having the meaning for generation of as short as possible ultrashort optical pulses by gain switching semiconductor lasers are reached.

What problem does this paper attempt to address?

Gain dynamics driven broadband Q-switched noise-like pulse in ultrafast fiber laser

Ji Zhou,Yuhang Li,Qing Yang,Yaoguang Ma,Qiang Liu

2021-01-01

Abstract: We investigate the buildup dynamics of broadband Q-switched noise-like pulse (QS-NLP) driven by slow gain dynamics in a microfiber-based passively mode-locked Yb-doped fiber laser. Based on shot-to-shot tracing of the transient optical spectra and qualitatively reproduced numerial simulation, we demonstrate that slow gain dynamics is deeply involved in the onset of such complex temporal and spectral instabilities of QS-NLP. The proposed dynamic model in this work could contribute to deeper insight of such nonlinear dynamics and transient dynamics simulation in ultrafast fiber laser.
Generation of Ultrashort Optical Pulse by Colliding-Pulse Mode Locking in Semiconductor Laser Diodes

HB Sun,LZ Hu,HY An,YD Li,SY Liu

1996-01-01

Chinese Science Bulletin

Abstract:The technique of mode locking has been improved and advanced cosiderably since its first demonstration in 1964. Picosecond, even femtosecond optical pulse is, in principle,capable of being generated easily by the technique.Ultrashort optical pulses from semiconductor laser diodes play an essential role in the research of transient process of high-speed physics phenomenon and molecular relaxation. Interest in picosecond technique has recently been stimulated especially by the applications such as high bit rate time-division multiplexed communication, electrooptic sampling, and picosecond optical logic gate. A considerable amount of theoretical and experimental work has been done on the research.Mode-locking, Q-switching and gain switching are commonly used meth
Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

Kamran Rajabi,Lai Wang,Zhibiao Hao,Yi Luo,Changzheng Sun,Bing Xiong,Yanjun Han,Jian Wang,Hongtao Li,Mo Li,Heng Long

DOI: https://doi.org/10.1109/jstqe.2017.2687821

IF: 4.9

2017-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:The pulse working of gain-switched laser diodes (LDs) provides more power than continuous-wave (CW) emission. Similar to the CW emission, the pulse emission affects by the structural properties and different loss mechanisms of the active region. In this paper, both of these parameters are investigated in InGaN-based LDs, numerically. It is found that the thickness of the InGaN quantum well (QW) have an influence on the transient pulse, and at high enough injection currents, the thinner QW with a higher loss in CW mode can produce a stronger transient peak emission. The study of loss mechanisms in these structures indicates that the cause of the strong emission in thinner QWis mainly from the higher carrier concentration inside the active layer, which decreases significantly by Auger recombination and carrier leakage. The results of this paper can help to have a better understanding about pulse emission power from InGaN-based LDs.
Generation of Ps Optical Pulse at Ultrahigh Repetition Rate of 38.5 GHz

HB Sun,LZ Hu,YD Li,SY Liu

1995-01-01

Chinese Science Bulletin

Abstract:Ultrashort optical pulses generated with semiconductor lasers are of great importance in applications such as very fast optical signal processing, high bit rate time-division multiplexed communication system and optoelectronic sampling system. The commonly used technique generating short pulses includes Q switching, gain switching, and mode
Research on 20ghz High Speed Ultra-Short Pulse Soliton Source

JF Dai,XH Ma,JL Yu,EZ Yang

DOI: https://doi.org/10.1109/apccas.2000.913438

2000-01-01

Abstract:This paper is a study on the generation of high speed ultra-short pulse series by using 10GHz DFB gain-switch semiconductor laser. An analysis about the compression property of optic pulse in dispersion decreasing fiber is presented through solving of nonlinear Schrodinger equation by means of numeric method. The output optical pulse of LiNO3 electronic optical modulator that has a frequency of twice that of the electrical driving signal can be compressed in dispersion decreasing fiber. Furthermore, the best way of substitute of dispersion decreasing fiber with comb-like dispersion fiber is now available.
Electrically smoothing gain-switched optical pulses from a semiconductor laser diode

Cong Wang,Fuyi Cao,Yuejun Liu,Hidekazu Nakamae,Masataka Kobayashi,Dongxin Jiang,Yihan Qi,Guoen Weng,Xiaobo Hu,Hidefumi Akiyama,Shaoqiang Chen

DOI: https://doi.org/10.1364/ol.537761

IF: 3.6

2024-11-01

Optics Letters

Abstract:Cong Wang, Fuyi Cao, Yuejun Liu, Hidekazu Nakamae, Masataka Kobayashi, Dongxin Jiang, Yihan Qi, Guoen Weng, Xiaobo Hu, Hidefumi Akiyama, Shaoqiang Chen The typical optical pulse from a gain-switched semiconductor laser diode (LD) usually consists of a first-spike (FS) component and a ... [Opt. Lett. 49, 6285-6288 (2024)]

optics
Study on Stimulated Brillouin Scattering Pulse Waveform

Hasi Wu-Li-Ji,Lu Zhi-Wei,Teng Yun-Peng,Liu Shu-Jie,Li Qiang,He Wei-Ming

DOI: https://doi.org/10.7498/aps.56.878

2007-01-01

Abstract:In this paper, the pulse waveform of stimulated Brillouin scattering (SBS) is investigated experimentally and theoretically. The variations of SBS pulse waveform with pump parameters, structural parameters and medium parameters are experimentally investigated with a Nd∶YAG Q-switched laser，and numerically simulated using SBS theory model. The theoretical calculations are in good agreement with the experimental results. The results indicate that modulation of pulse waveform is difficult to realige with low pump energy, short focal length, long lens-cell distance and long phonon life time. The influence of the pump parameters, structural parameters and medium parameters on SBS pulse waveform is discussed extensively.
Study for characteristics of passively Q-switched Nd : YVO4 laser with central SESAM

Yonggang Wang,Jiying Peng,Huiming Tan,Longsheng Qian,Lu Chai,ZhiGang Zhang,Qingyue Wang,Tao Lin,Xiaoyu Ma

2007-01-01

Abstract:Passively Q-switched diode-pumped Nd: YVO4 laser was realized with a novel central semiconductor saturable absorption mirror (SESAM). The shortest pulse duration is 8.3 ns. The highest peak power is 135 mW. The repetition rate varies between 400 kHz and 2 MHz. The repetition rate of Q-switch with the absorber is much higher than which of the most absorbers known as far.
Pushing the limit of pulse duration in Q-switched solid-state lasers with high gain

Yewen Jiang,Mingming Nie,Rui Guo,Xing Fu,Qiang Liu

DOI: https://doi.org/10.1016/j.optlastec.2020.106276

2020-09-01

Abstract:<p>We demonstrate a 1064 nm, mJ-level, sub-nanosecond end-pumped Q-switched laser with weak feedback and high gain. We obtain the pulse duration of 449.7 ps, namely 1.2 times of the round-trip time, as well as the maximum energy of 0.26 mJ at the repetition rate of 1 kHz. The pulse energy is further scaled to 3.6 mJ by a double-passed amplifier, resulting in the peak power of 8.1 MW at the highest repetition rate of 2 kHz. Moreover, both the classical Q-switching theory and weak-feedback Q-switching theory are utilized to analyze the experimental results. The simulated results support that the Q-switched lasers with weak feedback and high gain, is effective for approaching single roundtrip time, which is the pulse duration limit. Smaller pulse duration is expected by virtue of this simple and compact configuration.</p>

optics,physics, applied
Gain-switching of a LD End-Pumped Nd:YVO4 Microchip Laser

F Sheng,J Chen,JH Ge

DOI: https://doi.org/10.1117/12.575543

2005-01-01

Abstract:A study of the gain-switching process and output characteristics in a Nd:YVO4 microchip laser end-pumped by a fiber-coupled laser diode (LD) is reported here. The gain-switched laser pulses with controllable repetition-rate from 1Hz to 4kHz and pulse width of 16 ns are obtained. To analyze the gain-switching dynamics of the LD end-pumped Nd:YVO4 microchip laser, a theoretical model has been developed. The model is based on the rate equations of four-level systems and some practical physics conditions. Numerical simulations using the model illustrate the dependence of buildup time, pulse width and peak power of the gain-switched laser pulse on the pumping parameters. The experimental results coincide well with the theoretical analysis.
Research on Semiconductor Saturable Absorption Mirror Used for High Frequency Ultrashort Pulse Lasers

Chaoyang LI,Yanrong SONG,Zhigang ZHANG,Yonggang WANG

2005-01-01

Laser & Optoelectronics Progress

Abstract:The fundamental principle and preparing method of semiconductor saturable absorption mirrors (SESAMs) for passive mode-locking of solid state lasers, semiconductor lasers and fiber lasers are introduced. By using these mode-locking devices on solid state lasers and optically-pumped vertical external cavity surface semission semiconductor lasers, ultra-short pulses with repetition rate varying from several to hundreds of GHz have been obtained and the related methods are reviewed.
200-W short-pulse operation of photonic-crystal lasers based on simultaneous absorptive and radiative Q-switching

Ryohei Morita,Takuya Inoue,Takuma Ueda,Masaki Masuda,Kazuki Nigo,Masahiro Yoshida,Menaka De Zoysa,Kenji Ishizaki,John Gelleta,Susumu Noda

DOI: https://doi.org/10.1364/OE.499423

2023-09-11

Abstract:Short-pulse high-peak-power lasers are crucial laser sources for various applications such as non-thermal ultrafine material processing and eye-safe high-resolution remote sensing. Realizing such operation in a single semiconductor laser chip without amplifiers or external resonators is expected to contribute to the development of compact, affordable laser sources for such applications. In this paper, we demonstrate short-pulse high-peak-power photonic-crystal surface-emitting lasers based on simultaneous absorptive and radiative Q-switching. The proposed device induces an instantaneous and simultaneous decrease in both absorptive and out-of-plane radiation losses due to saturable absorption and self-evolution of the photonic band, respectively, which results in drastic Q-switching operation of the device. Based on this concept, we experimentally demonstrate short-pulse generation with 200-W-class peak power and a pulse width of < 30 ps. In addition, via pulse compression with dispersion compensation, we achieve an even higher peak power of ∼300 W with a shorter pulse width of ∼10 ps.
Direct ultrashort pulse generation by intracavity nonlinear compression

L. M. Zhao,D. Y. Tang,T. H. Cheng

DOI: https://doi.org/10.48550/arXiv.0910.5809

2009-10-30

Abstract:Direct generation of ultrashort, transform-limited pulses in a laser resonator is observed theoretically and experimentally. This constitutes a new type of ultrashort pulse generation in mode-locked lasers: in contrast to the well-known solitons (hyperbolic secant like), dispersion-managed solitons (Gaussian-like), and parabolic pulses plus external compression, ultrashort pulse solutions to the nonlinear wave equations that describe pulse evolution in the laser cavity are observed. Stable ultrashort, transform-limited pulses exist with optical spectrum broader than the gain bandwidth of the amplifier, and this has practical application for other lasers.

Optics
Photonic-crystal lasers with two-dimensionally arranged gain and loss sections for high-peak-power short-pulse operation

Ryohei Morita,Takuya Inoue,Menaka De Zoysa,Kenji Ishizaki,Susumu Noda

DOI: https://doi.org/10.1038/s41566-021-00771-5

IF: 35

2021-03-04

Nature Photonics

Abstract:Realizing high-peak-power (tens to hundreds of watts or higher) short-pulse (tens of picoseconds or less) operation in semiconductor lasers is crucial for state-of-the-art applications including eye-safe high-resolution remote sensing and non-thermal ultrafine material processing. However, it has been challenging to introduce mechanisms that enable stable high-peak-power short-pulse operation in conventional semiconductor lasers. Here, we propose photonic crystal lasers that have two-dimensionally arranged gain and loss sections to enable high-peak-power short-pulse operation in the fundamental mode while suppressing lasing in higher-order modes to avoid laser instability. On the basis of this concept, we experimentally realize a high peak power of ~20 W and a short pulse width of ~35 ps with an injection current of only 3-4 A using a 400-μm-diameter device and theoretically predict that even higher peak power (>300 W) can be achieved in a 1-mm-diameter device. Our results will contribute to the realization of next-generation laser sources for the aforementioned applications.

optics,physics, applied
Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Neetesh Singh,Jan Lorenzen,Milan Sinobad,Kai Wang,Andreas C. Liapis,Henry Frankis,Stefanie Haugg,Henry Francis,Jose Carreira,Michael Geiselmann,Mahmoud A. Gaafar,Tobias Herr,Jonathan D. B. Bradley,Zhipei Sun,Sonia M Garcia-Blanco,Franz X. Kartner

2023-03-02

Abstract:Chip-scale, high-energy optical pulse generation is becoming increasingly important as we expand activities into hard to reach areas such as space and deep ocean. Q-switching of the laser cavity is the best known technique for generating high-energy pulses, and typically such systems are in the realm of large bench-top solid-state lasers and fiber lasers, especially in the long wavelength range >1.8 um, thanks to their large energy storage capacity. However, in integrated photonics, the very property of tight mode confinement, that enables a small form factor, becomes an impediment to high energy application due to small optical mode cross-section. In this work, we demonstrate complementary metal-oxide-semiconductor (CMOS) compatible, rare-earth gain based large mode area (LMA) passively Q-switched laser in a compact footprint. We demonstrate high on-chip output pulse energy of >150 nJ in single transverse fundamental mode in the eye-safe window (1.9 um), with a slope efficiency ~ 40% in a footprint of ~9 mm2. The high energy pulse generation demonstrated in this work is comparable or in many cases exceeds Q-switched fiber lasers. This bodes well for field applications in medicine and space.

Optics
Generation of Steady-state Ultrashort Laser Pulses Based on a Novel Nonlinear Michelson Interferometer

Zhenguo Lü,Qi Wu,Qingxing Li,Zhenxin Yu

DOI: https://doi.org/10.1080/09500349314551691

IF: 1.3

1993-01-01

Journal of Modern Optics

Abstract:A pulsed neodymium-doped yttrium aluminium garnet laser mode locked by a novel nonlinear Michelson interferometer, where one branch contains a frequency-doubling potassium titanyl orthophosphate crystal, is reported for the first time. Under the optimal experimental condition, shorter than 10 ps average pulse width at 1·06 μm and up to 95% reproducibility of mode locking can be obtained, and the stability of output energy is about 7·5%. Finally, the reason why its mode-locking output characteristics have been significantly improved is also analysed in this paper.
Effect of Pumping Conditions on Output Characteristics of a Gain-Switched Nd:YVO4 Laser

SHENG Fang,CHEN Jun,GE Jian-hong

DOI: https://doi.org/10.3969/j.issn.1003-501x.2005.04.008

2005-01-01

Abstract:The dynamic characteristics of a gain-switched Nd:YVO4 laser pumped by a laser diode (LD) are simulated. By solving the gain-switching rate equations, the dependence of pulse width and its peak power for gain-switched laser pulses on LD pump parameters are theoretically analyzed. Furthermore, a method to narrow the output pulse width of a gain-switched solid-state laser is presented in the paper. It means that the direct current of the LD close to threshold and the pulsed current two times higher than threshold should be selected, furthermore, the pumping pulse width must be adjusted to ensure single-pulse output. The experimental results accord well with numerical calculations. So the method is most effective. The laser pulses at 1.064μm with pulse width of 20ns and controllable repetition rate from 1Hz to 4kHz is achieved by the method.
Photoconductive switch applied in solid state lasers

Shaohe Chen,Tao-Lue Chen,Youming Chen,Guoping Sheng,Xiangdong Si,Xiaodong Guo,Jianqiang Zhu,Ximing Deng

DOI: https://doi.org/10.1117/12.144134

1993-01-01

Abstract:On the basis of the GaAs photoconductor characteristic of the decrease resistance with the increase of irradiation, we first developed a high precision and ultrafast positive and negative feedback circuit. By using these techniques, we have made a novel method of mode-locking, automatic mode-selecting, Q-switching, and realizing synchronizing outputs of two independent pulse oscillators, the jitter is no more than +/- 1 ns.
Large current nanosecond pulse generating circuit for driving semiconductor laser

Yan-chao CHEN,Yong-ge FENG,Xian-bing ZHANG

DOI: https://doi.org/10.3788/OPE.20142211.3145

2014-01-01

Optics and Precision Engineering

Abstract:According to the requirements of pulse semiconductor lasers for peak powers,pulse widths and rising edges and considering the test behaviors of semiconductor lasers,a driving circuit for the semiconductor lasers with large current outputting,narrower widths and sharp edges was proposed.The circuit used a Metal Oxide Semiconductor Field Effect Transistor(MOSFET)as a switch device and a avalanche transistor as a driver to generate the large current pulse with sharp edge and narrow width.The effect of the pre-trigger pulse width and output load of the avalanche transistor on the amplitude and waveform of MOSFET output pulse was analyzed and how to adjust the coupling resistance to control the pulse\"down\"and oscillation was discussed.The experimental results show that the circuit generates electric pulses of 10 ns with continuously adjustable attitudes and sharp rising and falling edges,and the amplitude of pulse varies from 0A to 148 Aon a 1Ω resistor.After adjusting electric parameters,a 124 Acurrent pulse with a pulse width of 8.6ns is obtained.The circuit meets the needs of driving high power semiconductor lasers as well as laser testing.
Generation of an ultrashort pulse train through ultrafast parity-time symmetry switching

Wenhao Wang,Yanfang Zhang,Ben Li,Jing Wang,Jingui Ma,Peng Yuan,Dongfang Zhang,Hao Zhang,Liejia Qian

DOI: https://doi.org/10.1364/oe.492567

IF: 3.8

2023-05-27

Optics Express

Abstract:Wenhao Wang, Yanfang Zhang, Ben Li, Jing Wang, Jingui Ma, Peng Yuan, Dongfang Zhang, Hao Zhang, Liejia Qian We propose a scheme for the direct generation of an ultrashort pulse train as well as the further compression of pulsed lasers based on the ... [Opt. Express 31, 19523-19535 (2023)]

optics

Study of ultrashort optical pulse generation by gain switching of semiconductor lasers

Gain dynamics driven broadband Q-switched noise-like pulse in ultrafast fiber laser

Generation of Ultrashort Optical Pulse by Colliding-Pulse Mode Locking in Semiconductor Laser Diodes

Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

Generation of Ps Optical Pulse at Ultrahigh Repetition Rate of 38.5 GHz

Research on 20ghz High Speed Ultra-Short Pulse Soliton Source

Electrically smoothing gain-switched optical pulses from a semiconductor laser diode

Study on Stimulated Brillouin Scattering Pulse Waveform

Study for characteristics of passively Q-switched Nd : YVO4 laser with central SESAM

Pushing the limit of pulse duration in Q-switched solid-state lasers with high gain

Gain-switching of a LD End-Pumped Nd:YVO4 Microchip Laser

Research on Semiconductor Saturable Absorption Mirror Used for High Frequency Ultrashort Pulse Lasers

200-W short-pulse operation of photonic-crystal lasers based on simultaneous absorptive and radiative Q-switching

Direct ultrashort pulse generation by intracavity nonlinear compression

Photonic-crystal lasers with two-dimensionally arranged gain and loss sections for high-peak-power short-pulse operation

Chip-scale, CMOS-compatible, high energy passively Q-switched laser

Generation of Steady-state Ultrashort Laser Pulses Based on a Novel Nonlinear Michelson Interferometer

Effect of Pumping Conditions on Output Characteristics of a Gain-Switched Nd:YVO4 Laser

Photoconductive switch applied in solid state lasers

Large current nanosecond pulse generating circuit for driving semiconductor laser

Generation of an ultrashort pulse train through ultrafast parity-time symmetry switching