Abstract:Synchrotron radiation photoemission has been used to study the room temperature formation of the Sm/GaAs(100) interface. High resolution core level spectra results show that at low Sm coverage (<0.nm), the interaction between Sm and the substrate is weak, and the interface is nearly abrupt. With increasing the Sm coverage, the surface components of As3d and Ga3d core levels disappear quickly, which indicates Sm can exchange the Ga in bulk GaAs and bond with As. Ga atoms exchanged by the Sm atoms may diffuse into Sm overlayer and segregate on the Sm overlayer, and the As-Sm compounds may remain near the interface. At Sm coverage of 0.5nm, the Sm becomes the metallic film. According to a theoretical model, the interface formation and the profile are discussed in detail in the text.

SRPES study of adsorption of Sm on GaAs(100) and interface formation