Electron-hole competition in doped KNSBN crystal

Yangqiu Li,Yan Li,Zhongxiang Zhou,Xiudong Shun,Kebin Xu,Gengfu Zhou,Yundong Zhang
1996-01-01
Abstract:The electron-hole competition in doped KNSBN crystal was analysed by measuring the recording and the erasing kinetics of doped KNSBN crystals. It is shown that shorter the response time, sharper the competition between electrons and holes in doped KNSBN crystals. It leads to the decrease of the net index modulation and the diffraction efficiency. The reason of the increase of the hole carriers had been analysed in reduced Co:KNSBN crystals. The estimated effective carrier density is about the order of 1015 cm-3.
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