Abstract:We study carrier-interaction-induced many-body effects on the excitonic optical properties of highly photoexcited one-dimensional semiconductor quantum wire systems by solving the dynamically screened Bethe-Salpeter equation using realistic Coulomb interaction between carriers. Including dynamical screening effects in the electron-hole self-energy and in the electron-hole interaction vertex function, we find that the excitonic absorption is essentially peaked at a constant energy for a large range of photoexcitation density (n=0–6×105 cm-1), above which the absorption peak disappears without appreciable gain; i.e., no exciton to free electron-hole plasma Mott transition is observed, in contrast to previous theoretical results but in agreement with recent experimental findings. This absence of gain (or the nonexistence of a Mott transition) arises from the strong inelastic scattering by one-dimensional plasmons or charge density excitations, closely related to the non-Fermi-liquid nature of one-dimensional systems. Our theoretical work demonstrates a transition or a crossover in one-dimensional photoexcited electron-hole systems from an effective Fermi liquid behavior associated with a dilute gas of noninteracting excitons in the low-density region (n<105 cm-1) to a non-Fermi liquid in the high-density region (n>105 cm-1). The conventional quasistatic approximation for this problem is also carried out to compare with the full dynamical results. Numerical results for exciton binding energy and absorption spectra are given as functions of carrier density and temperature.

Broadening of excitonic linewidth due to scattering of free carriers in type-I-type-II mixed quantum wells

Excitation-density and Excess-Energy Dependence of Ultrafast Dynamics of Photoexcited Carriers in Intrinsic Bulk CdTe

The Role of Nonequilibrium LO Phonons, Pauli Exclusion, and Intervalley Pathways on the Relaxation of Hot Carriers in InGaAs Multi-Quantum-Well Structures

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Many-body effects on excitonic optical properties of photoexcited semiconductor quantum wire structures

Exciton-Exciton and Exciton-Phonon Interactions in an Interfacial Gaas Quantum Dot Ensemble

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures

Spectroscopic Line Shape Broadening Mechanisms In Pbse/Pbsrse Quantum Wells

Phonon Scattering and Exciton Localization: Molding Exciton Flux in Two Dimensional Disorder Energy Landscape

Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

Influence of Longitudinal Electric Field on the Hot-Phonon Effect in Quantum Wells

Comparative Study on the Broadening of Exciton Luminescence Linewidth Due to Phonon in Zinc-Blende and Wurtzite Gan Epilayers

Exciton Linewidth Broadening Induced by Exciton-Phonon Interactions in CsPbBr3 Nanocrystals.

Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure

Hot Carrier Relaxation Processes and Nonequilibrium Phonon Effect in Multiple Quantum Well Structures

Sub-nanosecond free carrier recombination in an indirectly excited quantum-well heterostructure

Direct determination of exciton homogeneous and inhomogeneous linewidths in semiconductor quantum wells with two-dimensional fourier transform spectroscopy

Exciton States in Wurtzite Ingan Strained Coupled Quantum Dots: Effects of Piezoelectricity and Spontaneous Polarization

Spectral Broadening and Population Relaxation in A Gaas Interfacial Quantum Dot Ensemble and Quantum Well Nanostructure

Investigation of Carrier Migration from WS2 Monolayer to Substrate by Photoluminescence