Abstract:The temperature characteristics of the resistivity of boron-doped polysilicon film for piezoresistive sensor have been studied. There is a minimum resistivity between room temperature and 450��C. The temperature of minimum resistivity is directly proportional to the potential barrier-height of grain boundary in polysilicon. The optimum way to decrease the temperature coefficient of polysilicon film resistor was given.

Temperature characteristics of boron-doped polysilicon film resistivity