Abstract:The electronic stopping power of low-energy He projectile particles moving through an Al film under channeling and off-channeling trajectories and its temperature dependence are studied by combining the time-dependent density-functional-theory method with molecular dynamics simulations. The results show that the effect of target temperature on target stopping power can be divided into two aspects which are derived from the target electron and target ion. Below 500 K, the effect of the target-electron temperature on target stopping power is almost negligible. The influence of the target-ion temperature on target stopping power can be divided into two aspects which are derived from the displacement and energy dissipation of target ions. The displacement of the target ion can result in two trends that change the target stopping power: (1) The target ion is closer to the center of lattice channel after displacement, which leads to the increase of target stopping power. (2) The target ion is farther away from the center of the lattice channel after displacement, which leads to the decrease in target stopping power. As the temperature increases, the target ions are more likely to appear farther away from the lattice channel than closer to the center of the lattice channel, so the average displacement of the target ions will lead to a decreasing trend of the target stopping power with the increase of temperature. Under the condition of a given ionic density in the target, the energy dissipation capacity of target ions increases with the increase of temperature, resulting in the tendency of the target stopping power to increase with the increase of temperature. Our calculated stopping powers are in good agreement with the experimental data and reproduced the deviation from velocity proportionality found in the experimental results for a He+ ion in Al, validating our approach and numerical implementation.

First-principles Study of the Threshold Effect in the Electronic Stopping Power of LiF Andsio2for Low-Velocity Protons and Helium Ions

Ab Initioelectronic Stopping Power and Threshold Effect of Channeled Slow Light Ions Inhfo2

Theoretical Study of the Channeling Effect in the Electronic Stopping Power of Silicon Carbide Nanocrystal for Low-Energy Protons and Helium Ions

Trajectory-dependent threshold effects of proton stopping power in LiF nanosheet

First-principles Simulation of the Electronic Stopping Power of He Ions in Al at Finite Temperature

Electronic Stopping of Iron for Protons and Helium Ions from First-Principles Calculations

Electronic Stopping Power of Slow-Light Channeling Ions in ZnTe from First Principles

Electronic Stopping Power under Channeling Conditions for Slow Ions in Ge Using First Principles

Chemical effect on the energy lose for slow ion channeling a narrow band gap semiconductor

First-principles Study of the Electronic Stopping Power of Zn for Protons

First-principles study of the electronic stopping power of indium for protons and He ions

Electronic Stopping of Protons in Magnesium from First Principles

Electronic stopping power of slow H+ and He2+ ions in CdTe from first principle

Electronic Stopping Power in Titanium for Proton and Helium Ions from First-Principle Calculations

Stopping powers of LiF thin films deposited onto self-supporting Al foils for swift protons

Nonlinear Electronic Stopping for Slow Ion in a Narrow Band Gap Semiconductor: Formation of Chemical Bonds during Collision.

Electronic stopping for protons and α particles from first-principles electron dynamics: The case of silicon carbide

Electronic Stopping Power for Slow Ions in the Low-Hardness Semimetal HgTe Using First-Principles Calculations

Molecular Dynamics Simulations of Ion Range Profiles for Heavy Ions in Light Targets

Effects of Semicore Electrons on Stopping Power in Helium-Irradiated Aluminum Nanosheets.

Electronic Stopping Power and Electronic Energy-Loss Mechanism for a Low-Energy Ion in TiN under Channeling Conditions