Effect of K-Dopant on the Electro-Magnetic Behaviors in Cu1−xKxIr2S4

Lei Zhang,Langsheng Ling,Ranran Zhang,Guolin Feng,Changjin Zhang,Li Pi,Yuheng Zhang
DOI: https://doi.org/10.7566/jpsj.83.024602
2014-01-01
Journal of the Physical Society of Japan
Abstract:The electro-magnetic behaviors of K-doped Cu1-xKxIr2S4 are investigated. It is found that the doping of K has rare effect on the crystal lattice, however, apparent influence on the chemical bonds is observed from the Raman spectroscopy. In addition, the doping of K has prominent impact on the electronic and magnetic behaviors. Although the phase transition temperature is hardly affected by the doping of K, the hysteresis of orbitally induced Peierls phase transition is widened, which may be attributed to the potential barriers caused by the dopant. Moreover, the rho(T) relation in the insulating phase has the tendency to metallic behavior, which indicates the orbital hybridization between 3p(6) electrons of K+ with that of S2- ions.
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