Abstract:Ferroelectric control of polarity of the spin‐polarized current can be achieved in van der Waals multiferroic heterostructures via reversible FE switch of the internal electric field and the FE control of the interfacial effect. This opens up new opportunities for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as multiferroic spin field‐effect transistors. Ferroelectric (FE) control of magnetism at nanoscale, for instance, FE control of the polarity of spin‐polarized current is crucial for technological advances in magnetoelectric and spintronic applications. However, this fascinating functionality has not been reported in nanoscale systems yet. Herein, a new class of FE/A‐type antiferromagnetic heterobilayer/FE van der Waals (vdW) multiferroic structures is found, in which the FE control of polarity of spin‐polarized current is found possible. Take Sc2CO2/CrSiTe3/CrGeTe3/Sc2CO2 heterostructure as a successful example. First‐principles calculations reveal that its polarity of half‐metallicity can be switched by flipping the FE polarization orientation. Meanwhile, device transport simulation shows that its up/down spin current transmission ratio is as large as 0.1 × 103 at P→↑↑ Sc2CO2 configuration and is only 2.6 × 10−3 at P→↓↓ Sc2CO2 configuration in the vdW multiferroic heterostructures. Essentially, it stems from the reversible FE switch of the internal electric field across the CrSiTe3/CrGeTe3 heterobilayer and the FE control of the interfacial effect between Sc2CO2 and Cr(Si/Ge)Te3 layers. This work opens a direction for constructing low‐energy‐dissipation, non‐volatile, and high‐sensitive spintronic devices such as spin field‐effect transistors.

Magnetic Control Spin-Polarization Reversal in a Hybrid Ferromagnet/semiconductor Spin Filter

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin Filtering And Spin-Polarization Reversal In Multilayered Ferromagnetic Metal/Semiconductor Heterostructures

Spin filtering and spin separation in diluted magnetic semiconductor hybrid systems

Switching of Current Spin Polarization by Electron-Phonon Interaction in a Quantum Dot Device

Spin Filtering Implemented Through Rashba Spin-Orbit Coupling and Weak Magnetic Modulations

Spin Filtering in the Double-Barrier Structure

Spin-filtering Junctions with Double Ferroelectric Barriers

Spin-canting-driven Triple Coupling of Spin, Electric, and Valley Polarization in Two-Dimensional Antiferromagnetic Semiconductors

Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

Ferroelectric Control of Polarity of the Spin‐polarized Current in Van Der Waals Multiferroic Heterostructures

Current and Spin-Filtering Dual Diodes Based on Diluted Magnetic Semiconductor Heterostructures with A Nonmagnetic Barrier

Non-equilibrium spin polarisation via interfacial exchange-field spin filtering

Spin Filtering in Single Magnetic Barrier Structures Revisited

Large magnetoresistance using hybrid spin filter devices

Spin current control of magnetism

Electric control of spin polarization orientation in a magnetic–electric barrier structure

Spin-filter Diode Based on ZnSe/Zn1−xMnxSe/Zn1−yMnySe/ZnSe Heterostructures

Electric-field-induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure.

Manipulating chiral-spin transport with ferroelectric polarization

Optically Controlled Spin Polarization in A Spin Transistor