Abstract:The thermal conductivity (k) of supported graphene is a critical property that reflects the graphene-substrate interaction, graphene structure quality, and is needed for thermal design of a graphene device. Yet the related k measurement has never been a trivial work and very few studies are reported to date, only at the mu m level. In this work, for the first time, the k of giant chemical vapor decomposition (CVD) graphene supported on poly(methyl methacrylate) (PMMA) is characterized using our transient electro-thermal technique based on a differential concept. Our graphene size is similar to mm, far above the samples studied in the past. This giant graphene measurement eliminates the thermal contact resistance problems and edge phonon scattering encountered in mu m-scale graphene k measurement. Such mm-scale measurement is critical for device/system-level thermal design since it reflects the effect of abundant grains in graphene. The k of 1.33-layered, 1.53-layered, 2.74-layered and 5.2-layered supported graphene is measured as 365 W m(-1) K-1, 359 W m(-1) K-1, 273 W m(-1) K-1 and 33.5 W m(-1) K-1, respectively. These values are significantly lower than the k of supported graphene on SiO2, and are about one order of magnitude lower than the k of suspended graphene. We speculate that the abundant C atoms in the PMMA promote more ready energy and momentum exchange with the supported graphene, and give rise to more phonon scattering than the SiO2 substrate. This leads to a lower k of CVD graphene on PMMA than that on SiO2. We attribute the existence of disorder in the sp(2) domain, graphene oxide (GO) and stratification in the 5.2-layered graphene to its more k reduction. The Raman linewidth (G peak) of the 5.2-layered graphene is also twice larger than that of the other three kinds of graphene, indicating the much more phonon scattering and shorter phonon lifetime in it. Also the electrical conductivity of the 5.2-layered graphene is about one-fifth of that for the other three. This further confirms the poor graphene quality of sample 4S, explaining its much lower k.

Substrate Coupling Suppresses Size Dependence of Thermal Conductivity in Supported Graphene

Suppressed Thermal Conductivity of Bilayer Graphene with Vacancy-Initiated Linkages

Structure-mediated thermal transport of monolayer graphene allotropes nanoribbons

Graphene Helicoid: Distinct Properties Promote Application of Graphene Related Materials in Thermal Management

Tailoring the Thermal and Electrical Transport Properties of Graphene Films by Grain Size Engineering

Size Effect of Thermal Conductivity in Monolayer Graphene

The Underestimated Thermal Conductivity of Graphene in Thermal-Bridge Measurement: A Computational Study

Substrate-induced reduction of graphene thermal conductivity

Width Dependent Intrinsic Thermal Conductivity of Suspended Monolayer Graphene

Thermal Conductivity of Giant Mono- to Few-Layered CVD Graphene Supported on an Organic Substrate.

Bimodal Grain-Size Scaling of Thermal Transport in Polycrystalline Graphene from Large-Scale Molecular Dynamics Simulations.

Substrate Effect on Thickness-Dependent Friction on Graphene

Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)‐Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role

Temperature Dependence of Thermal Conductivity of Giant-Scale Supported Monolayer Graphene

Size-dependent Mode Contributions to the Thermal Transport of Suspended and Supported Graphene

Interfacial Thermal Resistance and Thermal Rectification Between Suspended and Encased Single Layer Graphene

Temperature Dependence of Thermal Conductivity of Polycrystalline Graphene: Thermally Enhanced Kapitza Conductance

Substrate Effects on the Thermal Conductivity of Epitaxial Graphene Nanoribbons

Thermal Conduction Across Graphene Cross-Linkers

Molecular dynamics simulations of thermal conductivity and spectral phonon relaxation time in suspended and supported graphene

Thermal Conductivity of Suspended Few-Layer Graphene by A Modified T-Bridge Method