Investigation of the Current Collapse Induced in InGaN Back Barrier AlGaN/GaN High Electron Mobility Transistors

Wan Xiaojia,Wang Xiaoliang,Xiao Hongling,Feng Chun,Jiang Lijuan,Qu Shenqi,Wang Zhanguo,Hou Xun

DOI: https://doi.org/10.1088/1674-4926/34/10/104002

2013-01-01

Abstract:Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress.