First-principles study of structural and electronic properties of Al-Os intermetallic compounds

Gang Yao,Yiding Liu,Weibin Zhang,Xinyou An,Yu Chen,Hongwen Lei,Yajun Fu,Zhongqian Jiang,Yan Zhao,Xuemin Wang,Linhong Cao,Weidong Wua
DOI: https://doi.org/10.1016/j.jallcom.2013.07.053
IF: 6.2
2013-01-01
Journal of Alloys and Compounds
Abstract:•Al–Os system intermetallic compounds have been studied for the first time.•The alloying ability of Al3Os2 is much stronger than Al13Os4, Al2Os and AlOs.•The bulk modulus of Al–Os alloys increased linearly with increasing Os concentration.•The Al2Os phase is a semiconductor with an indirect band gap of 0.322 eV.
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